Irenee Pages

A new concept for the lateral DMOS transistor for smart power IC's

In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region.

A new lateral power MOSFET for smart power ICs : the LUDMOS concept

In this paper, a new concept of lateral DMOSFET for medium voltage (<100 V) smart power integrated circuits is proposed. These structures present a trench in the drift region filled with oxide or with oxide and polysilicon. These structures called LUDMOSFET feature a reduced specific on-resistance and enhanced breakdown voltage. For example, for a breakdown voltage of 50 V, the specific on-resistance is 1.2 mΩ cm 2 in the conventional LDMOSFET, 0.8 mΩ cm 2 in the LUDMOS without polysilicon (i.e. 30 percent reduction) and 0.6 mΩ cm 2 in the LUDMOS with polysilicon (i.e. 50 percent reduction). They are technologically compatible with advanced CMOS processes using trench isolation.

Clamped inductive switching of LDMOST for smart power IC's

This paper explores the energy capability of an integrated clamped lateral power MOS transistor. The energy capability is determined by switching the device on an inductive load. Experimental results show that the rating of the transistor in terms of energy has to be given along with the drain voltage applied during the transient regime. If the clamp voltage increases, the energy capability decreases. This is explained by the presence of a parasitic NPN transistor in the LDMOS transistor. A specific structure is designed in order to determine the energy capability that would correspond to a purely thermal failure mechanism.

A cost effective smart power technology for 45V applications

This paper describes a technology that offers a wide variety of devices: bipolar NPN and PNP transistors, low voltage and medium voltage CMOS, high voltage PMOS, power DMOS, zener diodes, resistors and capacitors. Device characteristics are presented. It is demonstrated that the DMOS device is optimized in terms of energy capability and On-resistance. Considering the low mask count, this technology is cost effective and device characteristics make it attractive for a wide range of Smart Power applications.

Advanced power copper technology for SMARTMOS/sup TM/ application designs

Cost effective automotive applications and the related circuit designs are requiring new SMARTMOS/sup TM/ technology extensions to manage energy capability and metal debiasing in smart power devices. A thick copper metallization scheme, POWER COPPER, has been integrated and characterized in the circuit design of two electronic modules for automotive applications.