J. Pleumeekers

Large-scale photonic integrated circuits

We present an overview of Infineras current generation of 100 Gb/s transmitter and receiver PICs as well as results from the next-generation 500 Gb/s PM-QPSK PICs.

InP Photonic Integrated Circuits

InP is an ideal integration platform for optical generation, switching, and detection components operating in the range of 1.3-1.6 m wavelength, which is preferred for data transmission in the most prevalent silica-based optical fiber. We review the current state of the art in advanced InP photonic ICs.

Current Status of Large-Scale InP Photonic Integrated Circuits

In this paper, the current state of the art for large-scale InP photonic integrated circuits (PICs) is reviewed with a focus on the devices and technologies that are driving the commercial scaling of highly integrated devices. Specifically, the performance, reliability, and manufacturability of commercial 100-Gb/s dense wavelength-division-multiplexed transmitter and receiver PICs are reviewed as well as next- and future-generation devices (500 Gb/s and beyond). The large-scale PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption which have enabled benefits at the component and system level.

Large-Scale InP Transmitter PICs for PM-DQPSK Fiber Transmission Systems

We report here the first demonstration of a large-scale monolithically integrated InP-based 10-channel 45.6-Gb/s per channel transmitter photonic integrated circuit employing polarization-multiplexed differential quadrature phase-shift keying modulation format.

Multi-channel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC) operating at 112 Gb/s per wavelength

A 10-wavelength, polarization-multiplexed, monolithically integrated InP transmitter PIC is demonstrated for the first time to operate at 112 Gb/s per wavelength with a coherent receiver PIC.

10 Channel, 45.6 Gb/s per Channel, Polarization-Multiplexed DQPSK, InP Receiver Photonic Integrated Circuit

We demonstrate a 10 wavelength, 200 GHz spaced, monolithically integrated, polarization-multiplexed, InP differential quadrature phase shift keying receiver operating at 45.6 Gb/s per wavelength. The receiver is based on a novel technique for polarization demodulation and phase tracking that does not require any external components.

From Visible Light-Emitting Diodes to Large-Scale III–V Photonic Integrated Circuits

The discovery of the visible light-emitting diode (LED) 50 years ago by Holonyak and Bevacqua and the associated demonstration of the viability of the III-V semiconductor alloy created a foundational basis for the field of optoelectronics. Key advances which enabled the progression from the first visible LED to todays III-V photonic integrated circuits (PICs) are described. Furthermore, the current state-of-the-art 500-Gb/s and 1-Tb/s large-scale InP transmitter and receiver PICs and their essential role in the optical communications networks are reviewed.

1.12 Tb/s superchannel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC)

In this work, a 10-wavelength, polarization-multiplexed, monolithically integrated InP coherent QPSK transmitter PIC is demonstrated to operate at 112 Gb/sec per wavelength and total chip superchannel bandwidth of 1.12 Tb/s. This demonstration suggests that increasing data capacity to multi-Tb/s per chip is possible and likely in the future.

Large-scale DWDM photonic integrated circuits: a manufacturable and scalable integration platform

Commercial scaling of electronic integrated circuits has proceeded at a fast pace once the initial hurdle to integration was overcome. Recently, it has been shown that record active and passive optical device counts, exceeding 50 discrete components, can be incorporated onto a single monolithic 100 Gbps DWDM transmitter PIC InP chip. We will investigate key production metrics for this large-scale PIC commercial device as well as other analogs to other III-V semiconductor commercial devices. Using the yield management tools pioneered by silicon based electronics, we will present data supporting their scalability and the manufacturability of these large-scale PICs

InP-based photonic integrated circuits: Technology and manufacturing

Large-scale InP-based photonic integrated circuits were first introduced in 2004, representing over an order-of-magnitude increase in integration complexity for commercial InP devices. In this talk we will review recent developments and manufacturing of these novel components.