J.S. Kolhatkar

Low-Frequency Noise Phenomena in Switched MOSFETs

In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, the authors review the limitations of current compact noise models which do not model such single-electron effects. The authors present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley-Read-Hall statistics to explain the behavior. Finally, the authors treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied.

Constant and Switched Bias Low Frequency Noise in p-MOSFETs with Varying Gate Oxide Thickness

A scroll compressor having a housing, a fixed scroll stationary on said housing, an orbiting scroll nested with the fixed scroll and being mounted on the eccentric of the compressor crankshaft for orbital motion about the longitudinal axis of the compressor, the base of the orbiting scroll having an annular groove formed in the outside or low pressure side thereof, a passage formed through the base of the orbiting scroll and placing the groove in fluid communication with an intermediate section of the pressure continuum for providing an axial compliance force against the base of the orbiting scroll and urging the wrap tips thereof into sealing engagement with the adjacent base of the fixed scroll, an annular seal positioned in the groove and having an annular web provided with a substantially planar contact side positioned in sliding, sealing contact with a sealing surface of housing and having annular elastomeric sealing components slidingly sealed against the walls of the groove to provide an axial compliance pressure chamber which is sealed from ambient pressures.

Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation

The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.

Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation

This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.

Low-frequency noise in hot-carrier degraded nMOSFETs

This paper discusses the low-frequency (LF) noise in submicron nMOSFETs under controlled transistor aging by hot-carrier stress. Both traditional, steady-state LF noise as well as the LF noise under periodic large-signal excitation were found to increase upon device degradation, for both hydrogen passivated and deuterium passivated Si–SiO2 interfaces. As hot-carrier degradation is slower in deuterium- annealed MOSFETs, so is the increase of the noise in these devices. The noise-suppressing effect of periodic OFF switching is gradually lost during hot-carrier degradation, as the LF noise under periodic large-signal excitation increases more rapidly than the LF noise in steady-state.