Jae-hyun Yeo

Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same

Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same

METHODS OF FORMING METAL THIN FILMS, LANTHANUM OXIDE FILMS, AND HIGH DIELECTRIC FILMS FOR SEMICONDUCTOR DEVICES USING ATOMIC LAYER DEPOSITION

Dielectric structures having high dielectric constants, methods of forming the dielectric structures, non-volatile semiconductor memory devices having the dielectric structures and methods of manufacturing the non-volatile semiconductor memory devices

Methods and apparatus for forming dielectric structures in integrated circuits

Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

METHOD OF FORMING A LAYER AND METHOD OF MANUFACTURING A CAPACITOR USING THE SAME

High performance MIS capacitor with HfO2 dielectric

Method of Manufacturing a Semiconductor Device Using an Atomic Layer Deposition Process