James C. Pickel

Cosmic-Ray-Induced Errors in MOS Devices

The results are reported for a comprehensive analytical and experimental study of galactic cosmic-ray-induced errors in MOS devices. An error rate model is described which utilizes exact expressions for a path-length distribution function and a Linear Energy Transfer (LET) spectrum for the cosmic ray environment to calculate the expected cosmic-ray-induced error rate in space for a given parallel-piped-shaped sensitive volume. The model validity is confirmed by comparison of predictions to bit-error data from devices in orbiting satellites, and to cosmic ray simulation measurements on the same device types at a cyclotron. The experimental results and model predictions are described for a wide variety of device types, including NMOS, PMOS, CMOS/bulk, CMOS/SOS, and ANOS.

Single-event effects rate prediction

Common practices for predicting rates of single-event effects (SEE) in microelectronics in space environments are reviewed. Established rate-prediction models are discussed, and comparison is drawn between alternative approaches with discussion of dominant modeling parameters, assumptions, and limitations and the impact on prediction results. Areas of current uncertainty are identified. Approaches for obtaining model parameters from test data are reviewed. The methods are illustrated by example calculations that explore the sensitivity of results on model parameter choices.

Radiation effects on photonic imagers-a historical perspective

Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices require special considerations for radiation effects. This paper summarizes the evolution of radiation effects understanding in infrared detector technology, charge coupled devices, and active pixel sensors. The paper provides a discussion of key radiation effects developments and a view of the future of the technologies from a radiation effects perspective.

Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits

Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallel-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.

CMOS RAM Cosmic-Ray-Induced-Error-Rate Analysis

The methodology and results are presented for a detailed analysis to predict the galactic cosmic ray induced bit-error rate in three commercially availale CMOS RAM types. A summary of cyclotron simulation data is provided and utilization of the experimental results in the Cosmic Ray Induced Error Rate (CRIER) model is described.

Trends in Parts Susceptibility to Single Event Upset from Heavy Ions

New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (Anaheim) and IRT have been combined with published data of JPL [1,2] and Aerospace [3] to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

Effect of CMOS Miniaturization on Cosmic-Ray-Induced Error Rate

As device feature size is scaled down for Very Large Scale Integration (VLSI) and Very High Speed Integrated Circuit (VHSIC) applications, consideration must be given to potential increased vulnerabiliity to single particle induced upset (memory soft error or processor logic error) from the natural radiation environment. This paper describes a detailed computer aided modeling study to predict the effect of scaling on the single event upset rate in CMOS memory cells in the galactic cosmic ray environment typical of high altitude satellite orbits.

Heavy Ion Induced Permanent Damage in MNOS Gate Insulators

Heavy-ion-induced permanent damage in MNOS gate insulators has been investigated using a Cf252 fission source. The electric field and ion LET thresholds for onset of the damage has been characterized. The results are consistent with a thermal runaway mechanism in the silicon nitride layer initiated by a single heavy ion and leading to a permanent high conductivity path through the dielectric layers.

Cosmic Ray Induced Permanent Damage in MNOS EAROMs

Permanent damage to the memory cells in Metal Nitride Oxide Semiconductor (MNOS) Electrically Alterable Read Only Memories (EAROM) has been observed after exposure to a heavy ion beam from a cyclotron under high field (Erase/Write Mode) conditions. The probability of permanent damage depends on the system application.

Low-Level Radiation Effects in Extrinsic Infrared Detectors

Experimental data are presented on the effect of gamma irradiation at low dose levels of 10 Rads or less on the responsivity of arsenic-doped extrinsic IR detectors under operating conditions at 4.3 to 12°K. The observed large changes in responsivity under irradiation, and the subsequent transient behavior during a period of less than 1 minute immediately after the radiation is turned off, are strongly dependent on temperature, bias voltage, and IR flux level. The net effect following irradiation is always a responsivity increase; however, under some conditions, the increase can be preceded by a decrease. The responsivity change relaxes slowly, requiring more than one day for complete recovery of the detector to its pre-irradiation condition. The effects anneal rapidly at temperatures over 20°K. The observed phenomena can be explained by radiation-induced changes in the charge state of the levels associated with the majority IR-active dopant and the compensating impurities. The complex dependence of the responsivity changes on the operating conditions is explained in terms of competing processes involved in capture, recombination, and sweepout of radiation-generated electrons and holes. The physical mechanisms and a qualitative model offering a possible explanation of the effect of temperature, bias, and IR flux level are discussed.