James Hoffman Mcfee

A technique for rapidly alternating boron and arsenic doping in ion‐implanted silicon molecular beam epitaxy

This letter reports the use of boron ion implantation doping during simultaneous growth of silicon molecular beam epitaxy. It describes further a technique for epitaxial growth of abrupt silicon p‐n junctions by rapid changeover during growth between boron and arsenic ion beams. This is expected to be of importance in a variety of applications, including, for example, high speed bipolar junction transistors.