James R. Coss

Heavy ion and proton induced single event transients in comparators

This paper presents a display of heavy-ion- and proton-induced single event transients for three comparators. The transient vital signs are serious: low LET threshold, very high voltage amplitude and extended pulse duration (microsecs.).

Observations of single event failure in power MOSFETs

This first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.

Single event gate rupture in commercial power MOSFETs

Several types of power MOSFETs were irradiated with heavy ions to characterize either single event gate rupture (SEGR) or single event burnout (SEB). The implications of the data, showing temperature-dependence and beam angle-dependence for SEGR, are indicated.<<ETX>>

An observation of proton-induced latchup (in CMOS microprocessor)

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measured of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena. >

Temperature and Epi Thickness Dependence of the Heavy Ion Induced Latchup Threshold for a CMOS/EPI 16K Static RAM

Data have been obtained with krypton and xenon ions for the latchup threshold vs. temperature of four different versions of a Harris CMOS/epi 16K static RAM. These special versions of the HM6516 RAM have 12-micron, 9-micron, 7-micron and 5-micron epi thicknesses, as grown. The test data showed a marked improvement in latchup resistance with decreasing epi thickness and with decreasing temperature over the range of 25°C (operating chip ambient) to 100°C.

Compendium of single event failures in power MOSFETs

This compendium of SEGR and SEB data organizes results from several laboratories comparing failure thresholds for several different manufacturers and technologies. The results of this compendium are aimed at the designer to show the possible variations between manufacturers and processes. The compendium incorporates previously published data with the most recent data obtained from various sources.

Overview Of Device See Susceptibility From Heavy Ions

A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.

Update of single event failure in power MOSFETs

This paper presents an update of the first 1994 compendium of single event test data for power MOSFETs. It provides failure thresholds from burnout or gate rupture for 61 devices of six manufacturers.

Device SEE susceptibility from heavy ions (1995-1996)

A seventh set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications. SEE trends are indicated for several functional classes of ICs.

Full temperature single event upset characterization of two microprocessor technologies

Data for the Fairchild 9450 I/sup 3/L bipolar microprocessor and the Harris 80C86 CMOS/epi (vintage 1985) microprocessor are presented, showing single-event soft errors for the full mil-spec temperature range of -55 degrees C to 125 degrees C. These data show for the first time that the soft-error cross sections continue to decrease with decreasing temperature at subzero temperatures. The temperature dependence of the two parts, however, is very different. >