Jaydip Guha
Micron Technology
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Jaydip Guha.
ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 | 2011
Shu Qin; Y. Jeff Hu; Allen McTeer; David Fillmore; Shifeng Lu; Rob Burke; Jaydip Guha; Danielle Vanhaeren; Pierre Eyben; Wilfred Vandervorst
High vacuum scanning spreading resistance microscopy (HV‐SSRM) and electron holography (EH) methods are used to study two‐dimensional (2D) cross‐sectional doping profiles of low energy high dose ion implantations including conventional beam‐line 75As implant and AsH3 plasma doping (PLAD). Both methods show quantitative definition of junction depths xj in vertical and lateral directions, and have been demonstrated to be powerful techniques for 2D doping profiling study. It has been found that AsH3 PLAD with −10 kV voltage and 1×1016/cm2 dose shows slightly deeper junction depth xj, both of vertical xj(V) and lateral xj(L) and with slightly larger xj(L)/xj(V) ratio than beam‐line 75As implant with 10 keV energy and 8×1015/cm2 dose. Good correlations among 2D HV‐SSRM doping profiles, 2D EH doping profiles, 2D doping profile simulation, and 1D SIMS/ARXPS As profiles have been demonstrated. Very good correlation between 2D doping profiles and device parameters has been demonstrated.
international workshop on junction technology | 2010
Shu Qin; Zhouguang Wang; Du Li; Y. Jeff Hu; Allen McTeer; Rob Burke; Jaydip Guha
Electron holography, as a powerful method for two-dimensional (2D) doping profiling, is used to study 2D cross-sectional doping profiles of low energy high dose ion implantations including conventional beam-line <sup>11</sup>B implant and B<inf>2</inf>H<inf>6</inf> plasma doping (PLAD). It has been found that B<inf>2</inf>H<inf>6</inf> PLAD with −6kV voltage and 2×10<sup>16</sup>/cm<sup>2</sup> dose shows slightly deeper junction depth x<inf>j</inf>, both of the vertical x<inf>j</inf>(V), and lateral x<inf>j</inf>(L) and with slightly larger x<inf>j</inf>(L)/x<inf>j</inf>(V) ratio, than beam-line <sup>11</sup>B implant with 2keV energy and 5×10<sup>15</sup>/cm<sup>2</sup> dose. RTP process with 995°C/20s condition demonstrates higher thermal budget than 1015°C/spike condition — cause deeper x<inf>j</inf>, but with a similar x<inf>j</inf>(L)/x<inf>j</inf>(V) ratio. Good correlations among 2D Electron Holography dopant profiles, 2D dopant profile simulations, and 1D SIMS/ARXPS B profiles have been demonstrated. Very good correlation between 2D Electron Holography doping profiles and device parameters has been demonstrated.
Archive | 2011
Jaydip Guha; Shyam Surthi; Suraj Mathew; Kamal M. Karda; Hung-Ming Tsai
Archive | 2012
Lars P. Heineck; Jaydip Guha
Archive | 2010
Suraj Mathew; Jaydip Guha
Archive | 2014
Lars P. Heineck; Shyam Surthi; Jaydip Guha
Archive | 2013
Jaydip Guha; Shyam Surthi; Suraj Mathew; Kamal M. Karda; Hung-Ming Tsai
Archive | 2011
Lars P. Heineck; Shyam Surthi; Jaydip Guha
Archive | 2012
Jaydip Guha; Shyam Surthi
Archive | 2014
Jaydip Guha; Shyam Surthi; Suraj Mathew; Kamal M. Karda; Hung-Ming Tsai