Jea-Gun Park

SOI structure having a SiGe layer interposed between the silicon and the insulator

Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same

Luminescence device and method of manufacturing the same

PRODUCTION OF SINGLE CRYSTAL SILICON INGOT AND WAFER BY ADJUSTING PULLING UP SPEED PROFILE IN HOT ZONE AND INGOT AND WAFER PRODUCED BY THE SAME

Manufacturing method of nano soi wafer and nano soi wafer manufactured thereby

Method of manufacturing a soi structure having a sige layer interposed between the silicon and the insulator

Solar cell and a production method therefor

DISPOSITIF NEUROMORPHIQUE ET PROCÉDÉ DE COMMANDE DE CELUI-CI

Effect of Cu-Doped Switching Layer of Amorphous Carbon-Oxide Based Reram on Non-Volatile Memory Characteristics for Forming-Free Operation

Selection Device with Cu Doped-Chalcogenide Material for 3D Cross-Point Array Structure of 1selector-1resistor Memory Cells