Jean-Marie Lauenstein

Impact of Ion Energy and Species on Single Event Effects Analysis

Experimental evidence and Monte-Carlo simulations for several technologies show that accurate SEE response predictions depend on a detailed description of the variability of radiation events (e.g., nuclear reactions), as opposed to the classical single-valued LET parameter. Rate predictions conducted with this simulation framework exhibit excellent agreement with the average observed SEU rate on NASAs MESSENGER mission to Mercury, while a prediction from the traditional IRPP method, which does not include the contribution from ion-ion reactions, falls well below the observed rate. While rate predictions depend on availability of technology information, the approach described here is sufficiently flexible that reasonably accurate results describing the response to irradiation can be obtained even in the absence of detailed information about the device geometry and fabrication process.

Effects of Ion Species on SEB Failure Voltage of Power DMOSFET

This paper presents and explains test results showing the effect of ion species on the single event burnout (SEB) failure voltage using a SEB sensitive engineering power double diffused metal oxide silicon field effect transistor (DMOSFET). The analyses show the determining factor of tested SEB failure voltage is the ion species itself rather than test or beam conditions such as initial beam energy, surface linear energy transfer (LET), ion range, or ionized charge. Also, results from five test facilities and five test setups are compared to determine if there will be differences in test results when different test setups or different heavy ion accelerator facilities were used.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.

Radiation belt modeling for spacecraft design: model comparisons for common orbits

We present the current status of radiation belt modeling, providing model details and comparisons with AP-8 and AE-8 for commonly used orbits. Improved modeling of the particle environment enables smarter space system design.

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems

We present the results of single event effects (SEE) testing and investigating the effects of space radiation on electronics. This paper is a summary of test results.

Compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA

Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Under heavy-ion exposure at sufficiently high reverse-bias voltages, silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed.