Michael J. Campola

Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron technologies. The experimental data are used to calibrate a Monte Carlo rate prediction model, which is used to evaluate the importance of this upset mechanism in typical space environments. For the ISS orbit and a geosynchronous (worst day) orbit, direct ionization from protons is a major contributor to the total error rate, but for a geosynchronous (solar min) orbit, the proton flux is too low to cause a significant number of events. The implications of these results for hardness assurance are discussed.

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the incident ion to the n- and p-wells of the SRAM. The MBU response is simulated using Monte Carlo methods for a space environment. The probability is calculated for event size. Single-bit upsets in the space environment account for 90% of all events with exponentially decreasing probabilities of larger MBU events.

Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs

Single event latchup (SEL) in a 65 nm CMOS SRAM technology due to heavy ions is observed and device sensitivity is shown to be a strong function of lateral beam orientation, angle of incidence, and temperature. Experimental results show the importance of testing at multiple lateral beam orientations to properly characterize device sensitivity.

Recent Single Event Effects Compendium of Candidate Electronics for NASA Space Systems

We present the results of single event effects (SEE) testing and investigating the effects of space radiation on electronics. This paper is a summary of test results.

Improved Model for Increased Surface Recombination Current in Irradiated Bipolar Junction Transistors

Current gain degradation in irradiated bipolar junction transistors is primarily due to excess base current caused by enhanced carrier recombination in the emitter-base space-charge region (SCR). Radiation-induced traps at the interface between silicon and the bipolar base oxide facilitate the recombination process primarily above the sensitive emitter-base junction. This leads to an increase in surface recombination current in the SCR, which is a non-ideal component of the BJTs base current characteristic under active bias conditions. In this paper, we derive a precise analytical model for surface recombination current that captures bias dependencies typically omitted from traditional models. This improved model is validated by comparisons to these traditional approaches.

Compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA

Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.

Heavy Ion Testing With Iron at 1 GeV/amu

A 1 GeV/amu 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends at the GCR flux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90° tilt irradiation yields a unique device response. These tilt angle effects need to be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.

Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

Heavy ion testing at the galactic cosmic ray energy peak

A 1 GeV/u 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.

Bayesian Methods for Bounding Single-Event Related Risk in Low-Cost Satellite Missions

Adapting conventional SEE hardness assurance approaches to low-cost, risk tolerant missions has proven difficult. Such approaches do not have a natural approach for realizing cost savings for increased risk tolerance. We develop single-event-risk prior probability distributions based on historical and heritage data. The Priors can be used to bound SEE risk for testing, part selection and design. By adjusting the desired confidence and success probability for the prior, one can tailor it to the risk tolerance of the mission.