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Dive into the research topics where Jean-Pierre Laur is active.

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Featured researches published by Jean-Pierre Laur.


IEEE Transactions on Power Electronics | 2011

Integrated LC Filter on Silicon for DC–DC Converter Applications

Philippe Artillan; Magali Brunet; David Bourrier; Jean-Pierre Laur; Nicolas Mauran; Laurent Bary; Monique Dilhan; Bruno Estibals; Corinne Alonso; Jean-Louis Sanchez

The integration of passive components on silicon for future dc-dc converter applications is still a challenging area of research. This paper reports the microfabrication of a fully integrated filter containing a spiral inductor on top of a 3-D capacitor. A thin magnetic shielding layer is introduced between the two components demonstrating that losses caused by the inductor in the capacitor area are reduced, thus increasing the maximum working frequency of the whole component. The fabricated filter was characterized in a test circuit (buck-type converter).


international symposium on power semiconductor devices and ic s | 1999

A new circuit-breaker integrated device for protection applications

Jean-Pierre Laur; J-L. Sanchez; M. Marmouget; Patrick Austin; J. Jalade; M. Breil; M. Roy

In this paper, a new circuit-breaker integrated device for low power electronic circuit protection, based on the functional integration mode, is investigated. The influence of the physical and technological parameters of this device upon the main electrical characteristics has been analyzed using analytical models and the ATLAS software tool. The initial experimental results are presented.


IEEE Transactions on Power Electronics | 2008

New Self-Switching Converters

Frédéric Richardeau; Nicolas Roux; Henri Foch; Jean-Pierre Laur; Marie Breil-Dupuy; Jean-Louis Sanchez; Florence Capy

This paper presents an original concept in which integrated over-voltage and/or over-current protections of power devices are used to produce a self-switching operation. Such a commutation is shown as a possible combination with conventional forced-switching and spontaneous-switching to simplify direct regenerative ac-dc conversion, insulating dc-ac-dc conversion and finally direct ac-ac conversion. Experimental results prove the feasibility of the concept through which the self turn-off operation is likely to offer the best practical gains.


international symposium on power semiconductor devices and ic's | 2002

The concave junction: an attractive topology to design specific junction terminations

H. Hakim; Jean-Louis Sanchez; Jean-Pierre Laur; Patrick Austin; M. Breil

In this paper a new junction topology, the concave junction, and its application in specific junction terminations are presented. We demonstrate, by solving the ionization integrals in the non-punchthrough case, that the breakdown voltage of this type of junction can be higher than that of the infinite plane junction. Based on numerical simulations, we investigate the use of this property to design peripheral terminations for vertical devices with very deep trenches.


european conference on power electronics and applications | 2013

Low-profile small-size ferrite cores for powerSiP integrated inductors

Yen Mai Nguyen; Magali Brunet; Jean-Pierre Laur; David Bourrier; Samuel Charlot; Zarel Valdez-Nava; Vincent Bley; Céline Combettes

Ferrite-based micro-inductors integrated on silicon are proposed as potential hybrid integration in low-power medium frequency DC-DC power converters. The inductors are fabricated at wafer level using micromachining and flip chip assembling techniques. The proposed process is based on a sintered ferrite core placed in between thick electroplated copper windings on two silicon substrates. The low profile (110 μm thick) ferrite cores are produced by thermal bonding of two green tape-casted films of 1.2 × 2.6 × 0.2 mm3, then micro-milled to the final dimensions before sintering. This paper presents the magnetic characterization of the sintered ferrite films cut in rectangular shape and sintered at different temperatures. It is concluded that these small dimension cores could be used in the frequency range applications of 5-10 MHz and would potentially allow a high inductance density in a 3D integration process.


international conference mixed design of integrated circuits and systems | 2007

Design of an Integrated Self-Switching Mode Device for Power Converters

F. Capy; Abdelhakim Bourennane; M. Breil; Frédéric Richardeau; E. Imbernon; Jean-Louis Sanchez; Jean-Pierre Laur; Patrick Austin

In this paper, we present a design procedure for the integration of a new specific function based on the association of a ZVS mode thyristor and a circuit breaker dedicated to self-switching mode power converters. This function, based on the functional integration concept, monolithically associates protection, self-drive and power switch functions. This function uses an original switching mode of operation. After presenting the characteristics of the function and the function specifications, we focus on the different design steps: function optimization and cells sizing using 2D electrical and technological simulations, and mask design.


ieee industry applications society annual meeting | 2005

Micro inductors using low temperature fabrication processes for integrated DC-DC microconverters

Bruno Estibals; Jean-Louis Sanchez; Corinne Alonso; Jean-Pierre Laur; Alain Salles; David Bourrier; Monique Dilhan

We present in this paper trends and technologies for the integration of inductors for DC-DC microconverters. In particular, we present the fabrication steps of different structures as a function of the application: planar inductors for low power consumption, and 3D magnetic inductors for higher power. These devices are achieved using low temperature fabrication processes based in photolithography or and electroplating techniques.


Microelectronics Journal | 1999

A new self-firing MOS-thyristor device: optimization of the turn-off performance and experimental results

M. Breil; Jean-Louis Sanchez; Patrick Austin; Jean-Pierre Laur

In this paper, a new integrated self-firing and controlled turn-off MOS-thyristor structure is investigated. An analytical model describing the turn-off operation and parasitic latch-up was developed, allowing to highlight and optimize the physical and geometrical parameters acting upon main electrical characteristics. The analytical model is validated by two-dimensional (2D) simulations using PISCES. The technological fabrication process is optimized by 2D simulations using SUPREM IV. Electrical characterization results of fabricated test structures are presented.


European Journal of Electrical Engineering | 2010

Architectures d'interrupteur de puissance autocommuté

Florence Capy; Jean-Pierre Laur; Marie Breil; Frédéric Richardeau; Jean-Louis Sanchez

In this paper, a detailed analysis of a new monolithically integrated power device dedicated for self switching converters is carried out. We proposed two original solutions based on two power switches: a MOS-thyristor and an IGBT-sense. Their operation mode is analyzed using 2D physical simulation. Then, the obtained results are discussed to compare the two topologies.


Archive | 2001

Variable-capacitance capacitor

Jean-Louis Sanchez; Jean-Pierre Laur; Hedi Hakim; Patrick Austin; Jean Jalade; Marie Breil

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Jean-Louis Sanchez

Centre national de la recherche scientifique

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Patrick Austin

Centre national de la recherche scientifique

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M. Breil

Centre national de la recherche scientifique

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Henri Foch

Centre national de la recherche scientifique

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Olivier Causse

Centre national de la recherche scientifique

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David Bourrier

Centre national de la recherche scientifique

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Monique Dilhan

Centre national de la recherche scientifique

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