M. Breil

Realization of vertical P/sup +/ walls through-wafer for bi-directional current and voltage power integrated devices

P/sup +/ walls through wafer can be considered as a region key in the 3D architecture of new bi-directional current and voltage power integrated devices. In this paper, we demonstrate the possibility of fabricating these P/sup +/ walls combining the deep RIE of silicon and deposit of boron doped polysilicon.

A new high-voltage integrated switch: the "thyristor dual" function

In this paper, a new monolithic integrated device providing the thyristor dual function without auxiliary supply and based on the functional integration mode is investigated. The influence of the physical and technological parameters of this new structure upon the main electrical characteristics and the physical behaviour has been analyzed using the ATLAS software tool. An optimized device is proposed and test structures have been fabricated.

A new circuit-breaker integrated device for protection applications

In this paper, a new circuit-breaker integrated device for low power electronic circuit protection, based on the functional integration mode, is investigated. The influence of the physical and technological parameters of this device upon the main electrical characteristics has been analyzed using analytical models and the ATLAS software tool. The initial experimental results are presented.

Evolution of the Classical Functional Integration Towards a 3D Heterogeneous Functional Integration

This paper presents a brief overview of the monolithic integration in the field of power electronics. Emphasis is mainly put on the functional integration concept. The role that this mode of integration, according to its classical definition, played to enable the monolithic integration of the power device with auxiliary elements (mainly protections and supply) for the realization of new functions dedicated for medium power applications is highlighted. At that end, some of the recent realizations are described in order to showcase some of the potentialities of this mode of integration. Furthermore, to extend further the classical integration towards a 3D heterogeneous functional integration, an example that highlights the improvements that should be achieved at the devices level as well as at the devices environment level, for the development of new power integrated functions for AC applications, is discussed. The last part deals with the technology process evolution for the realization of the active devices as well as the passive elements. In this part, a flexible technological process and its importance in the development of more complex functions, implemented in 3D within the silicon die volume and at the surface, is described in more detail.

The concave junction: an attractive topology to design specific junction terminations

In this paper a new junction topology, the concave junction, and its application in specific junction terminations are presented. We demonstrate, by solving the ionization integrals in the non-punchthrough case, that the breakdown voltage of this type of junction can be higher than that of the infinite plane junction. Based on numerical simulations, we investigate the use of this property to design peripheral terminations for vertical devices with very deep trenches.

Design of an Integrated Self-Switching Mode Device for Power Converters

In this paper, we present a design procedure for the integration of a new specific function based on the association of a ZVS mode thyristor and a circuit breaker dedicated to self-switching mode power converters. This function, based on the functional integration concept, monolithically associates protection, self-drive and power switch functions. This function uses an original switching mode of operation. After presenting the characteristics of the function and the function specifications, we focus on the different design steps: function optimization and cells sizing using 2D electrical and technological simulations, and mask design.

Short-circuit protection structure for insulated gate power devices

In this paper, we present a new integrated structure which can protect insulated gate power devices (lGBT, MMOS, EST, ... ) from short-circuit operating mode. This strnctnre is built with an anode voltage sensor, a delay LDMOS transistor, a LDMOS transistor allowing the power device gate unload and a Zener diode. It is notable that this protection structure is fully compatible with a power device technological process. The operating mode and the flrst optimization of the protection structure are presented. For this, IGBT is used as test device. 2D simulations are performed with ISE TCAD. First experimental results of the anode voltage sensor are given and compared with simulation results.

A new self-firing MOS-thyristor device: optimization of the turn-off performance and experimental results

In this paper, a new integrated self-firing and controlled turn-off MOS-thyristor structure is investigated. An analytical model describing the turn-off operation and parasitic latch-up was developed, allowing to highlight and optimize the physical and geometrical parameters acting upon main electrical characteristics. The analytical model is validated by two-dimensional (2D) simulations using PISCES. The technological fabrication process is optimized by 2D simulations using SUPREM IV. Electrical characterization results of fabricated test structures are presented.

Turn-off performance comparison of self-firing MOS-thyristor devices for ZVS applications

In this paper, design aspects of two self-firing MOS-thyristor associations are given in order to optimize their turn-off performance. For each structure, the investigation is based on an analytical model and 2D simulations using PISCES. Electrical characterization results of fabricated test structures are presented.

Exploring Various MOS-Thyristor Associations for a New Power Integrated Function: the IGTH

In this paper, various MOS-thyristor associations are investigated in order to develop a new integrated power switch : the IGTH, which combines a thyristor mode in the on-state and IGBT turn-on switching characteristics, allowing the turn-on current waveform control. This function offers the advantages of a thyristor on-state whilst reducing ElectroMagnetic Interference (EMI) due to hard switching modes. The physical behavior of the various MOS-thyristor associations are analized using 2D numerical simulations. An optimized device has been fabricated and experimental switching waveforms are presented.