Patrick Austin

Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.

SEB characterisation of commercial power MOSFETs with backside laser and heavy ions of different ranges

This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.

Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs

Abstract IGBT power components are more and more used in atmospheric and space applications. Thus, it is essential to study the influence of the natural radiation environment (NRE) on the electrical behavior of planar and trench IGBTs. 2-D numerical simulations are performed to define the sensitive volume and triggering criteria of SEBs for planar and trench IGBTs for different configurations of ionizing tracks. The analysis of the results allows a better understanding of the SEB mechanism in each structure and comparing the behavior and the robustness of these two technologies under heavy-ion irradiation.

Realization of vertical P/sup +/ walls through-wafer for bi-directional current and voltage power integrated devices

P/sup +/ walls through wafer can be considered as a region key in the 3D architecture of new bi-directional current and voltage power integrated devices. In this paper, we demonstrate the possibility of fabricating these P/sup +/ walls combining the deep RIE of silicon and deposit of boron doped polysilicon.

Flexible technological process for functional integration

In this paper, a flexible technological process suitable for the development of complex integrated power structures based on the functional integration mode is presented. This technological process is based on a succession of basic technological steps corresponding to the fabrication of IGBT devices and compatible specific steps supporting more complex functions.

A new circuit-breaker integrated device for protection applications

In this paper, a new circuit-breaker integrated device for low power electronic circuit protection, based on the functional integration mode, is investigated. The influence of the physical and technological parameters of this device upon the main electrical characteristics has been analyzed using analytical models and the ATLAS software tool. The initial experimental results are presented.

Temperature effects on power MOSFET and IGBT sensitivities toward single events

Proton accelerator and pulsed laser tests show that temperature induces large variations compared to room temperature for power electronic radiation sensitivity assessment.

The concave junction: an attractive topology to design specific junction terminations

In this paper a new junction topology, the concave junction, and its application in specific junction terminations are presented. We demonstrate, by solving the ionization integrals in the non-punchthrough case, that the breakdown voltage of this type of junction can be higher than that of the infinite plane junction. Based on numerical simulations, we investigate the use of this property to design peripheral terminations for vertical devices with very deep trenches.

A new peripheral planar structure allowing a symmetrical blocking voltage

A new peripheral symmetrical planar structure of junction termination type is presented, allowing symmetrical blocking voltage. This peripheral structure can be considered as a new element for power monolithic integration. Based on 2D simulations, this peripheral structure has been optimized to obtain the maximum two-directional breakdown voltage capability.

Design of an Integrated Self-Switching Mode Device for Power Converters

In this paper, we present a design procedure for the integration of a new specific function based on the association of a ZVS mode thyristor and a circuit breaker dedicated to self-switching mode power converters. This function, based on the functional integration concept, monolithically associates protection, self-drive and power switch functions. This function uses an original switching mode of operation. After presenting the characteristics of the function and the function specifications, we focus on the different design steps: function optimization and cells sizing using 2D electrical and technological simulations, and mask design.