Jean-Pierre Schoellkopf
STMicroelectronics
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Publication
Featured researches published by Jean-Pierre Schoellkopf.
international reliability physics symposium | 2000
Philippe Candelier; Nathalie Villani; Jean-Pierre Schoellkopf; Patrick Mortini
An innovative non-volatile memory cell based on gate oxide breakdown is presented. The full compatibility with a standard CMOS process and the limited programming current per cell make the drift antifuse a low cost and dense non-volatile storage solution. Reliable storage is demonstrated and results from both device architecture and design optimization are given.
international reliability physics symposium | 2004
Philippe Roche; Francois Jacquet; C. Caillat; Jean-Pierre Schoellkopf
Terrestrial radiations, such as neutrons or alpha, create charges which, when collected by sensitive memory nodes, can destroy its stored information. Such a failure is called a soft error since only the data is destroyed while the circuit itself is not permanently damaged. Today, as the dimensions and operating voltages of semiconductor devices are continually reduced, the intrinsic SRAM sensitivity to ionizing radiations significantly increases. Whereas there is a linear and moderate increase on a per Mbit basis, the system SER significantly grows up together with the amount of SRAMs embedded in the chips. To meet the increasing need for both robust and highly integrated SRAMs, an original 3D memory device has been developed mixing SRAM and eDRAM capacitors. This memory cell, named rSRAM/spl trade/ cell (r standing for robust), has been validated through a testchip manufactured in a standard 120 nm CMOS technology.
adaptive hardware and systems | 2010
George Tsiligiannis; Kostas Makris; Tasos Lambaounas; Dimosthenis Fragopoulos; Panagiotis Anagnostopoulos; C. Papadas; Jean-Pierre Schoellkopf; Boris Glass
In this paper a 24-bit Digital to Analog Converter using the ΣΔ modulation suitable for space applications is presented. This converter operates in the frequency range of 0.1 mHz up to 1kHz It features a current steering output stage consisting of 32 differential current sources. The device includes an I2C protocol which allows the selection of the Oversampling, Ratio of the converter to be either x128 or x256 for a 12 kHz or 6 kHz sampling ratio respectively. This circuit can be used either as a stand alone device or embedded into an ASIC as an IP core.
IEEE Design & Test of Computers | 2009
Jean-Pierre Schoellkopf; Philippe Magarshack
With advanced semiconductor technology nodes, power management has become a global problem. In battery powered applications, this problem is even more critical. This article describes a range of design solutions that STMicroelectronics uses to manage dynamic and static power while meeting its targets for area and performance.
Archive | 1999
Philippe Candelier; Jean-Pierre Schoellkopf
IEEE Transactions on Nuclear Science | 2007
Jean-Luc Autran; Philippe Roche; Joseph Borel; Christophe Sudre; K. Castellani-Coulie; D. Munteanu; Thierry Parrassin; Gilles Gasiot; Jean-Pierre Schoellkopf
Archive | 1994
Jean-Pierre Schoellkopf
Archive | 2000
Jean-Pierre Schoellkopf
Archive | 2005
Jean-Pierre Schoellkopf; Richard Fournel
Archive | 1998
C. Papadas; Jean-Pierre Schoellkopf