Man-sug Kang

Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe

We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining endurance characteristics up to 109 cycles. Our results indicate that the scalable PRAM device enabling the use of PRAM in dynamic RAM and storage class memory applications can be realized using CVD GBT.

Highly manufacturable 1 Gb NAND flash using 0.12 /spl mu/m process technology

An 1 Gb NAND flash memory has been successfully developed by integrating new technologies, inverse narrow-width effect (INWE) suppression scheme, 32-cell NAND flash combined with the scaling-down of tunnel oxide, inter-poly ONO, and gate poly re-oxidation. It is implemented using KrF photolithography along with a resolution enhancing technique, the planarized surface by etch-back and CMP processes, highly selective contact etching and nonoverlapped dual damascene metallization. Thus, for the first time, a 1 Gb NAND flash memory with mass-producible chip size of 132 mm/sup 2/, lower Vcc operation below 1.8 V and lower power consumption, has been obtained.

Novel flowable CVD process technology for sub-20nm interlayer dielectrics

Flowable CVD (Chemical Vapor Deposition) process having merits in terms of both superior gap-fill performance of SOD (Spin-on Dielectric) and process stability of CVD was introduced for the interlayer dielectric (ILD) in sub-20nm devices based on new concept and precursor. Remote plasma during low temperature deposition and ozone treatment was adopted to stabilize the film. We also developed a novel Flowable CVD process which does not oxidize Si or electrode, resulted in removal of Si3N4 stopper layer as an oxidation or diffusion barrier. After the application of Flowable CVD to 20nm DRAM ILD, we could reduce not only loading capacitance of Bit-line by 15% but also enhance comparable productivity. Through the successful development of sub-20nm DRAM ILD Gap-fill process, Flowable CVD was successful demonstrated as a promising candidate for mass production-worthy ILD in sub-20nm next generation devices.