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Jerry Yuen-Kui Wong

Applied Materials

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Publication

Featured researches published by Jerry Yuen-Kui Wong.

Archive | 1992

Plasma etch process

Kenneth S. Collins; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswich; David W. Groechel

Archive | 1992

Plasma processing reactor and process for plasma etching.

Kenneth S. Collins; Craig A. Roderick; John Trow; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel; Ii Jay D Pinson; Tetsuya Ishikawa; Lawrence Chung-Lai Lei; Masato Toshima

Archive | 1997

Plasma reactor and processes using RF inductive coupling and scavenger temperature control

Kenneth S. Collins; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel

Archive | 2000

Plasma reactor using inductive RF coupling, and processes

Kenneth S. Collins; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel; Craig A. Roderick; John Trow; Tetsuya Ishikawa; D. Pinson Ii Jay; Lawrence Chang-Lai Lei; Masato Toshima; Gerald Zheyao Yin

Archive | 1993

Process used in an RF coupled plasma reactor

Kenneth S. Collins; Craig A. Roderick; John Trow; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel; D. Pinson Ii Jay; Tetsuya Ishikawa; Lawrence Chang-Lai Lei; Masato Toshima

Archive | 1992

Plasma etch process and plasma processing reactor

Kenneth S. Collins; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswich; David W. Groechel

Archive | 1996

Method for processing substrates using gaseous silicon scavenger

Kenneth S. Collins; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel

Archive | 1999

PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR

Kenneth S. Collins; Craig A. Roderick; John Trow; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel; Jay D. Pinson; Tetsuya Ishikawa; Lawrence Chang-Lai Lei; Masato Toshima

Archive | 2000

Magnetic confinement in a plasma reactor having an RF bias electrode

Kenneth S. Collins; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel; Craig A. Roderick; John Trow; Tetsuya Ishikawa; D. Pinson Ii Jay; Lawrence Chang-Lai Lei; Masato Toshima; Gerald Zheyao Yin

Archive | 1997

Plasma etch processes

Kenneth S. Collins; Craig A. Roderick; John Trow; Chan-Lon Yang; Jerry Yuen-Kui Wong; Jeffrey Marks; Peter R. Keswick; David W. Groechel; D. Pinson Ii Jay; Tetsuya Ishikawa; Lawrence Chang-Lai Lei; Masato Toshima; Gerald Zheyao Yin

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Collaboration

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Jeffrey Marks

Applied Materials

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Chan-Lon Yang

Applied Materials

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David W. Groechel

Applied Materials

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Kenneth S. Collins

Applied Materials

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Peter R. Keswick

Applied Materials

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Craig A. Roderick

Applied Materials

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John Trow

Applied Materials

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Masato Toshima

Applied Materials

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Lawrence Chang-Lai Lei

Applied Materials

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Tetsuya Ishikawa

University of Tokyo

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