Jes K. Larsen

Reduced interface recombination in Cu2ZnSnS4 solar cells with atomic layer deposition Zn1−xSnxOy buffer layers

Cu2ZnSnS4 (CZTS) solar cells typically include a CdS buffer layer in between the CZTS and ZnO front contact. For sulfide CZTS, with a bandgap around 1.5 eV, the band alignment between CZTS and CdS ...

Interference effects in photoluminescence spectra of Cu2ZnSnS4 and Cu(In,Ga)Se2 thin films

Photoluminescence (PL) is commonly used for investigations of Cu2ZnSnS(e)4 [CZTS(e)] and Cu(In,Ga)Se2 (CIGS) thin film solar cells. The influence of interference effects on these measurements is, however, largely overlooked in the community. Here, it is demonstrated that PL spectra of typical CZTS absorbers on Mo/glass substrates can be heavily distorted by interference effects. One reason for the pronounced interference in CZTS is the low reabsorption of the PL emission that typically occurs below the band gap. A similar situation occurs in band gap graded CIGS where the PL emission originates predominantly from the band gap minimum located at the notch region. Based on an optical model for interference effects of PL emitted from a thin film, several approaches to reduce the fringing are identified and tested experimentally. These approaches include the use of measured reflectance data, a calculated interference function, use of high angles of incidence during PL measurements as well as the measurement of polarized light near the Brewster angle.

Optical properties of Cu2ZnSn(SxSe1-x)4 solar absorbers: Spectroscopic ellipsometry and ab initio calculations

Dielectric functions of Cu2ZnSn(SxSe1-x)4 thin film absorbers with varied x were determined by spectroscopic ellipsometry and ab initio calculations. From the combination of experimental and theoretical studies, the fundamental interband transition energy E0 (∼1–1.5 eV) and the next following transition energy E1 (∼2–3 eV) were identified and found to blue-shift with increasing sulfur anion content, while keeping the energy separation E1−E0 almost constant, ∼1.4 eV from experiments, and 1 eV from theory. In addition, the average dielectric responses were found to decrease with sulfur anion content from both theoretical and experimental results. The Tauc optical bandgap value Eg determined on samples prepared on Mo and soda lime glass substrate showed a positive linear relationship between x and bandgap Eg. The bandgap bowing factor determined from the theoretical data is 0.09 eV.

Cu 2 ZnSn(S, Se) 4 solar cell absorbers from diffusion of selenium into annealed Cu 2 ZnSnS 4 absorbers

Small grain compound-sputtered Copper Zinc Tin Sulfide (CZTS) precursors and large grain recrystallized CZTS solar cell absorbers are annealed at sub-recrystallization temperatures in selenium atmosphere to promote selenium diffusion into the CZTS films. Grazing incidence x-ray diffraction and Raman spectroscopy show the presence of two distinct sulfide and mixed sulfide/selenide phases, with the selenide-like phase more prominent at the front surface of the absorber. Only a narrow range of sulfur-to-selenium ratios is observed in the sulfide/selenide phase. Secondary ion mass spectrometry profiles show a compositional sulfur-selenium gradient for samples annealed at 450° C. Scanning electron microscopy with energy dispersive X-ray spectroscopy reveals that the compositional gradient is formed by a spatial distribution of sulfide/selenide grains, embedded in the remaining sulfide absorber. Sulfur-selenium gradients within single absorber grains are not observed, indicating that the mixed sulfide/selenide phase nucleates and grows in competition with the existing sulfide phase, rather than forming by replacement of anions within existing crystals. IV and EQE measurements of devices fabricated from the selenized absorbers support this conclusion.