Jiaxin Yao | Researchain

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Featured researches published by Jiaxin Yao.

Chinese Physics Letters | 1998

Stability of Mo/Si multilayer structure used in Bragg-Fresnel optics

Z C Le; J L Cao; J.-Q. Liang; S Pei; Jiaxin Yao; C J Cui

The thermal and chemical stabilities of Mo/Si multilayer structure used in Bragg-Fresnel optics were studied to get optimal technological parameters of pattern generation. Mo/Si multilayers were annealed at temperature ranging from 360 to 770 K, treated with acetone and 5 parts per thousand NaOH solution, and characterized by small-angle x-ray diffraction technique as well as x-ray photoelectron spectroscopy, and Olympus microscopy.

Hydrology Research | 2015

Investigating a complex lake-catchment-river system using artificial neural networks: Poyang Lake (China)

Yanzhong Li; Q. Zhang; Adrian D. Werner; Jiaxin Yao

Hydrology Research | 2016

Application of a distributed catchment model to investigate hydrological impacts of climate change within Poyang Lake catchment (China)

Yanzhong Li; Hui Tao; Jiaxin Yao; Q. Zhang

Chinese Physics Letters | 2017

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-

Zhaozhao Hou; Guilei Wang; Jinjuan Xiang; Jiaxin Yao; Zhenhua Wu; Qingzhu Zhang; Huaxiang Yin

IEEE Electron Device Letters | 2018

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Qingzhu Zhang; Huaxiang Yin; Lingkuan Meng; Jiaxin Yao; Junjie Li; Guilei Wang; Yudong Li; Zhenhua Wu; Wenjuan Xiong; Hong Yang; Hailing Tu; Junfeng Li; Chao Zhao; Wenwu Wang; Tianchun Ye

ECS Journal of Solid State Science and Technology | 2017

Dielectrics and SiGe Epitaxial Substrates

Zhaozhao Hou; Qingzhu Zhang; Huaxiang Yin; Jinjuan Xiang; Changliang Qin; Jiaxin Yao; Jie Gu

china semiconductor technology international conference | 2018

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

Qingzhu Zhang; Junjie Li; Hailing Tu; Huaxiang Yi; Jiang Yan; Lingkuan Meng; Jiaxin Yao; Guilei Wang; Zhijun Cao; Yudong Li; Zhaohao Zhang; Zhenhua Wu; Feng Wei; Hongbin Zhao; Jiangfeng Gao; Xiaobin He; Qifeng Jiang; Wenjuan Xiong; Jinjuan Xiang; Zhangyu Zhou; Yihong Lu; Gaobo Xu; Kun Luo; Yu Pan; Renren Xu; Jie Gu; Chaozhao Hou; Junfeng Li; Wenwu Wang

china semiconductor technology international conference | 2018