Jin-Bum Kim

Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers

Nano scale body-tied FinFETs have been firstly fabricated. They have fin top width of 30 nm, fin bottom width of 61 nm, fin height of 99 nm, and gate length of 60 nm. This Omega MOSFET shows excellent transistor characteristics, such as very low subthreshold swing, Drain Induced Barrier Lowering (DIBL) of 24 mV/V, almost no body bias effect, and orders of magnitude lower I/sub SUB//I/sub D/ than planar type DRAM cell transistors.

A novel simple shallow trench isolation (SSTI) technology using high selective CeO/sub 2/ slurry and liner SiN as a CMP stopper

A novel simple shallow trench isolation technology, SSTI, has been developed. SSTI consists of direct trench etching masked only with the photoresist, trench oxidation, liner SiN deposition, CVD oxide trench fill, densification, and high selectivity CMP. CMP stops at the liner SiN with a residual SiN thickness range of less than 2 nm and without micro-scratching. High selectivity CMP eliminates the field recess variation which is one of the drawbacks of conventional STI. SSTI is a promising candidate for future isolation technology.

Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

To synthesize a thermally robust Ni1-xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni1-xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1-xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.

Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

Uniform deposition of high-k dielectrics on two-dimensional (2D) crystals is highly desirable for their use in future nano-electronic devices. Here, the surface coverage of the Al2O3 films grown by atomic layer deposition (ALD) was investigated on mechanically-exfoliated MoS2, WS2, WSe2, and h-BN flakes for exploring the deposition kinetics of the Al2O3 films on the 2D crystals. The film coverage followed a decreasing order of WSe2 > WS2 > MoS2 > h-BN, which was mainly determined by the ALD temperature and adsorption energy (Eads) of the ALD precursor (trimethyl-aluminum) during the initial ALD cycles. The obtained |Eads| values of the precursor on the 2D crystals corresponded well to a van der Waals physisorption energy of 0.05–0.26 eV. Furthermore, the magnitude of the extracted Eads values showed a strong dependence on the induced dipole polarizability of the 2D crystals. The obtained results demonstrate that the surface coverage of the ALD high-k dielectrics can be modulated by choosing the types of the 2D substrates, and could provide a pathway for the integration of high-k dielectrics in 2D crystal-based nano-electronic devices.