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Featured researches published by Joerg Rottstegge.


SPIE's 27th Annual International Symposium on Microlithography | 2002

Ultrathin film imaging at 157 nm

Joerg Rottstegge; Waltraud Herbst; Stefan Hien; Gerald Fuetterer; Christian Eschbaumer; Christoph Hohle; Johannes Schwider; Michael Sebald

In future lithography the 157 nm wavelength is expected to succeed the 193 nm wavelength in 2004. So an early CARL resist for sub 100 nm resolution was developed at Infineon Technologies within the German BMBF project Laserbasierte Ultraprazisionstechnik - 157 nm Lithographie. Common 248 and 193 nm resist materials have a high absorbance (7- 12 μm-1) A main challenge at this short exposure wavelength is the development of a transparent base polymer or the imaging has to be done alternatively with ultra thin films. In contrast to a high transparency of the polymer a high quantum yield for the photo chemicals is required. CARL is a bilayer resist system developed by Siemens/Infineon Technologies. A modified CARL version is presented here for exposures at 157 nm, consisting of a silicon free top resist (Si free CARL) as thin imaging layer. A separate silylation step of the structured top resist after exposure and wet development provides a high etch resistance in the dry development step and allows imaging of ultra-thin films with a film thickness of ca. 50 nm. An oxygen plasma is taken to transfer these top resist structures into the up to 300 nm thick underlying Novolac type bottom resist. In dry development. The bottom resist itself provides high etch resistance also for aggressive substrate etch processes.


SPIE's 27th Annual International Symposium on Microlithography | 2002

Novel fluoro copolymers for 157-nm photoresists: a progress report

Christoph Hohle; Stefan Hien; Christian Eschbaumer; Joerg Rottstegge; Michael Sebald

Several fluoro-substituted polymers consisting of acid cleavable methacryoic or cinnamic acid tert.-butyl ester compounds copolymerized with maleic acid anhydride derivatives were synthesized by radical copolymerization. Vacuum ultraviolet transmission measurements of the samples reveal absorbances down to 5micrometers -1 despite of the strongly absorbing anhydride moiety which serves as silylation anchor for the application of the Chemical Amplification of Resist Lines (CARL) process, one of the promising approaches for sub-90nm pattern fabrication. Some of the samples exhibit resolutions down to 110nm dense at 157nm exposure using an alternating phase shift mask. The feasibility of the CARL principle including the silylation reaction after development has been demonstrated with selected fluorinated polymer samples.


Storage and Retrieval for Image and Video Databases | 2002

Interference patterning of gratings with a period of 150 nm at a wavelength of 157 nm

Gerald Fuetterer; Waltraud Herbst; Joerg Rottstegge; Margit Ferstl; Michael Sebald; Johannes Schwider


Archive | 2001

Reinforcing a structured photoresist comprises reacting a polymer having iso(thio)cyanate groups with a silicon compound having nucleophilic groups, or vice versa

Jens Ferbitz; Werner Mormann; Joerg Rottstegge; Christoph Hohle; Christian Eschbaumer; Michael Sebald


Archive | 2001

Chemically-enhanced photo-resist for use, e.g. in the production of structured chips for the semiconductor industry, comprises a solution of polymer with fluorinated acid-labile residues attached to polar groups

Christoph Hohle; Joerg Rottstegge; Christian Eschbaumer; Michael Sebald


Archive | 2002

Chemical amplification of photoresist, used as mask in microchip manufacture, uses resist based on polymer with acid-labile groups and anchor groups, liquid medium in coupling with amplification agent and water for final wash

Siew Siew Yip; Joerg Rottstegge; Ernst Richter; Gertrud Falk; Michael Sebald; Kerstin Seibold; Marion Kern


Archive | 2002

Chemical amplification of structurized resist, used in microchip production, uses resist based on polymer with acid-labile and anchor groups and photo-acid generator and treatment with amplification agent solution

Joerg Rottstegge; Waltraud Herbst; Gertrud Falk; Eberhard Kuehn


Archive | 2002

Verfahren zur Erhöhung der Ätzresistenz und zur Verkleinerung der Loch- oder Grabenbreite einer Fotoresiststruktur unter Verwendung von Lösungsmittelsystemen geringer Polarität

Joerg Rottstegge; Waltraud Herbst; Gertrud Falk; Eberhard Kuehn


Archive | 2001

A chemically strengthened resist useful for semiconductor microchips comprises a film forming polymer

Joerg Rottstegge; Christian Eschbaumer; Christoph Hohle; Waltraud Herbst; Michael Sebald


Archive | 2001

Neue, auf Polykondensaten basierende Resists mit gesteigertem Auflösungsvermögen für den Einsatz in der 157 nm Lithografie Last-based resists condensation polymers with enhanced resolution for use in the 157 nm lithography

Christian Eschbaumer; Christoph Hohle; Michael Sebald; Joerg Rottstegge

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Johannes Schwider

University of Erlangen-Nuremberg

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