Johannes Groschopf

Self-aligned multiple gate transistor formed on a bulk substrate

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS

FORMING SEMICONDUCTOR RESISTORS IN A SEMICONDUCTOR DEVICE COMPRISING METAL GATES BY INCREASING ETCH RESISTIVITY OF THE RESISTORS

Method of forming CMOS device having gate insulation layers of different type and thickness

Replacement Gate Approach for High-K Metal Gate Stacks by Using a Multi-Layer Contact Level

Semiconductor Device with DRAM Word Lines and Gate Electrodes in Non-Memory Regions of the Device Comprised of a Metal, and Methods of Making Same

Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels

Austauschgateverfahren für Metallgatestapel mit großem ε unter Anwendung einer Mehrschichtkontaktebene und Halbleiterbauelement

Planarization of a Material System in a Semiconductor Device by Using a Non-Selective In Situ Prepared Slurry

ELECTROCHEMICAL PLANARIZATION SYSTEM COMPRISING ENHANCED ELECTROLYTE FLOW