John C. Malinowski

A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

A BiCMOS technology is presented that integrates a high performance NPN (f/sub T/=120 GHz and f/sub max/=100 GHz), ASIC compatible 0.11 /spl mu/m L/sub eff/ CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared to previously published results has been achieved through further collector and base profile optimization guided by process and device simulations. Base transit time reduction was achieved by simultaneously increasing the Ge ramp and by limiting the base diffusion with the addition of carbon doping to SiGe epitaxial base. This paper describes IBMs next generation SiGe BiCMOS production technology targeted at the communications market.

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

Early production results are reviewed for IBMs integrated SiGe HBT technology. With a sample size of over 200 wafers, statistical control of key HBT parameters (F/sub T/, F/sub max/, R/sub bb/, R/sub bi/, /spl beta/) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirement for the high performance wireless communications marketplace.

Integrated RF components in a SiGe bipolar technology

Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors have inductance values in the range of /spl sim/0.15-80 nH with typical maximum quality-factors (Q/sub max/) of 3-20. The Q/sub max/s are highest if the doping concentration under the inductors is kept minimum. It is shown that the inductor area is an important parameter toward optimization of Q/sub max/ at a given frequency. The inductors can be represented in circuit design by a simple lumped-element model. MOS capacitors have Qs of /spl sim/20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Qs of /spl sim/80/f (GHz)/C(pF), and varactors with a 40% tuning range have Qs of /spl sim/70/f (GHz)/C(pF). Those devices can he modeled by using lumped elements as well. The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter.

SiGe HBT technology: device and application issues

SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of III-V HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. This paper will review the status of IBMs SiGe HBT technology particularly focusing on some key device and application issues for high frequency circuit applications. In this work we review graded-base SiGe HBTs optimized for analog circuits and address four key issues: 1) BV/sub ceo/ constraints, 2) Transmission line loss, 3) Noise performance, and 4) Process integration leverage and issues. All of the hardware results are for self-aligned, polysilicon emitter, graded-base SiGe HBTs fabricated in a 200 mm semiconductor production line using the UHV/CVD technique for film growth.

A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications

A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integration capabilities of the technology. The CMOS circuits include CMOS ring oscillators and a 64 k SRAM with a 34 /spl mu/m/sup 2/ cell size. The SiGe-HBT circuits include ECL ring oscillators and a Voltage Controlled Oscillator (VCO). This is the highest level of integration yet achieved for any SiGe-base bipolar technology.

RF components implemented in an analog SiGe bipolar technology

Several components for the design of RF transceivers on silicon substrates, developed in a manufacturable analog SiGe bipolar technology without any significant process alterations, are described. Spiral inductors in the range /spl sim/0.15-80 nH with typical maximum Qs of 3-20, MOS and MIM capacitors (1-2 pF) with Qs up to 80, and varactors with 40% tuning range and Qs of 20-50 are presented.

Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process

Experimental results are presented on a set of microwave inductors and transformers fabricated in a lateral spiral design utilizing two metal layers rather than a single metal layer as used in conventional planar magnetic devices. The fabrication process utilizes a production Si-SiGe HBT technology with standard metallization and a thick polyimide dielectric. Inductors with peak Qs between 2.6-5 and inductance values between 1-3 nH are presented. Transformers with a loss of less than 5 dB when corrected for impedance mismatch and a measured coupling coefficient (k) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed.

A 0.24 /spl mu/m SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 /spl mu/m L/sub ett/ CMOS

A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We also describe the resulting 0.24 /spl mu/m SiGe BiCMOS technology, BiCMOS 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications.

Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies

To address the needs of 3 V wireless components such as power amplifiers, we have added a new, high-breakdown (6 V) HBT to IBMs 200 mm SiGe technology and explore the large-signal performance for the first time. At 0.9 GHz and 1.8 GHz, we observe excellent power densities of up to 1.36 mW//spl mu/m/sup 2/, outstanding PAE reaching 70% and no performance degradation in integrating the HBT with CMOS.

High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module

Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thick metal.