John Dinh | Researchain

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international electron devices meeting | 2013

Conductive-bridge memory (CBRAM) with excellent high-temperature retention

John R. Jameson; P. Blanchard; C. Cheng; John Dinh; Antonio R. Gallo; V. Gopalakrishnan; Chakravarthy Gopalan; B. Guichet; S. Hsu; Deepak Kamalanathan; David Kim; Foroozan Sarah Koushan; Ming Sang Kwan; K. Law; Derric Lewis; Y. Ma; V. McCaffrey; Sung-Wook Park; S. Puthenthermadam; E. Runnion; J. Sanchez; J. Shields; K. Tsai; A. Tysdal; D. Wang; R. Williams; Michael N. Kozicki; Janet Wang; Venkatesh P. Gopinath; Shane Hollmer

High-temperature data retention is a critical hurdle for the commercialization of emerging nonvolatile memories. For Conductive-Bridge RAM (CBRAM) [1], we discuss high-temperature retention in terms of the physics of quantum point contacts, and we report on a family of CBRAM cells that achieve excellent retention at temperatures exceeding 200°C.

international memory workshop | 2016

An Ultra Low-Power Non-Volatile Memory Design Enabled by Subquantum Conductive-Bridge RAM

Nathan Gonzales; John Dinh; Derric Lewis; Nad Edward Gilbert; Bard Pedersen; Deepak Kamalanathan; John R. Jameson; Shane Hollmer

Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.

symposium on vlsi circuits | 2013