Jong-Wan Choi

Semiconductor devices with an air gap in trench isolation dielectric

Methods of reducing impurity concentration in isolating films in semiconductor devices

Semiconductor device having trench isolation region and methods of fabricating the same

Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same

METHOD OF FILLING A TRENCH AND METHOD OF FORMING AN ISOLATING LAYER STRUCTURE USING THE SAME

METHODS OF FORMING NON-VOLATILE MEMORY DEVICES INCLUDING LOW-K DIELECTRIC GAPS IN SUBSTRATES AND DEVICES SO FORMED

Methods of Manufacturing Flash Memory Devices by Selective Removal of Nitrogen Atoms

Semiconductor device and method of manufacturing having the same

Methods of fabricating semiconductor devices having air gaps in dielectric layers

METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING VERTICAL CHANNELS AND SEMICONDUCTOR DEVICES FORMED USING SUCH METHODS