Joseph E. Oberlander

Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography

We will discuss our approach towards a second generation radiation sensitive developable bottom antireflective coating (DBARCs) for 193 nm. We will show imaging results (1:1 L/S features down to 140 nm) for some first generation implant resist material based upon a fluorinated resins and also show relative implant resistance of these first generation fluorinated resists towards As implantation (15 KeV at 5x1015 dose with 20 x 10-4 amp). Also, discussed will be a second generation of implant resists based on a non-fluorinated resins. Surprisingly, we found that the nonfluorinated materials gave better implant resistance (~2-3 X1011 atoms/cm2) despite the higher atomic number of fluorine compared to hydrogen in the fluorinated implant materials (~2-5X1012 atoms/cm2). Finally, we will give an update on the lithographic performance of this second generation of implant resists.

Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results

We will discuss our recent results using a second generation radiation sensitive developable 193 Bottom Antireflective coatings (DBARCs). These DBARC materials are made solvent resistant the application of a resist coating on top of them through a crosslinking mechanism that is reversible by acid catalyzed reaction upon exposure of the DBARC/resist stack. Typically this is done by crosslinking a copolymer containing a hydroxyl moiety with a polyfunctional vinylether during post applied bake. This DBARC approach, after exposure, allows for development of the stack in exposed areas down to the substrate eschewing the plasma etch breakthrough needed for conventional bottom antireflective coatings which are irreversibly crosslinked. We will give an update on the performance our latest 193 nm DBARC materials used with different Implant 193 nm resists when using a phase shift mask with off axis illumination.

Radiation sensitive developable bottom anti-reflective coatings (DBARC) for 193nm lithography: first generation

A first generation DBARC applicable for 1st minimum 193nm lithography is described in this paper. The polymer used in this DBARC is insoluble in the casting solvent of the resist, which is propyleneglycolmonomethyletheracetate (PGMEA). Photo acid generator (PAG) and base extractions from the DBARC coating by the resist casting solvent were examined by the DBARC dissolution rates in the developer, before and after solvent treatments. Although the resist and the DBARC do not appear to intermix, strong interaction between the two is evident by their lithographic performance and dissolution rate study.