Judy H. Huang

Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films

Abstract Fluorine doped silicon dioxide (SiOF) is recognized as a potential intermetal dielectric (IMD) film for sub-half micron devices, due to its low dielectric constant (κ) and good gap-fill capabilities. For the first time, physically stable and high deposition rate (1550 nm/min) SiOF films were deposited using a parallel-plate plasma CVD–single wafer DxZ reactor, involving SiF4/TEOS/O2 chemistry. The analytical results indicate that these SiOF films, having a F concentration up to 3.0%, contain only Si–F bonding, do not absorb moisture and show stable dielectric constants. A typical highly stable SiOF film has F concentration and dielectric constant values of 2.4% and 3.5, respectively. This film is thermally stable up to 600°C and can be used as a low cost cap layer for HDP–CVD oxides and other low κ spin-on-glass materials, as well as an IMD layer for damascene applications.

Advanced planarized passivation for sub-micron technology

Abstract An advanced passivation gap-fill process was developed for sub-micron technology. Excellent gap-fill was achieved using the stack of triethoxyfluorosilane (TEFS) doped fluoro-silicate (FSG) and silicon nitride films. This TEFS-based gap-fill process provides both high throughput and cost-effective planarized passivation. The TEFS-FSG film can completely fill 0.45 μm width ×0.9 μm height gap. No forbidden void or cavity was observed in larger gaps wider than 1 μm after the deposition of a silicon nitride cap-layer. Various reliability tests such as pressure cooker test, corrosion test, and seven-alloy anneal test were carried out. Corrosion test result showed that there was no peeling or corrosion mark on TEFS-FSG film deposited on TiN/Ti/Al metal wafers. FTIR data indicated there was no water absorption in TEFS-FSG film after pressure cooker and corrosion tests.

BLO/spl kappa//sup TM/-a low-/spl kappa/ dielectric barrier/etch stop film for copper damascene applications

A low-/spl kappa/ dielectric barrier/etch stop film has been developed for use in copper damascene processes. The film is deposited using Dow Corning/sup R/ organosilicon gas as a precursor in a single-wafer PECVD chamber, and has a lower dielectric constant (/spl les/5) compared to the SiC film (>7) generated by SiH/sub 4/ and CH/sub 4/ and plasma silicon nitrides (>7). This film is amorphous and composed of silicon, carbon and hydrogen (a-SiC:H). The film characterization, including physical, electrical, copper diffusion barrier properties, and etch selectivity demonstrated that this film is a good barrier/etch stop for low-/spl kappa/ copper damascene applications. Due to its low dielectric constant, low effective /spl kappa/ values can be achieved in damascene devices. This film has been named BLO/spl kappa//sup TM/ (barrier low /spl kappa/) (Pai and Ting, 1989).