JumHan Bae
Samsung
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Featured researches published by JumHan Bae.
international solid-state circuits conference | 2004
GoangSeog Choi; Joo-Seon Kim; Hyun-jeong Park; YoungJun Ahn; Hyun-Soo Park; Jin-seok Hong; JumHan Bae; Bom-Yun Kim; YongSik Joo; Tae-Hyeon Sim; In-Sik Park; Dong-Ho Shin
A single-chip front-end SoC, comprising a PRML with an adaptive equalizer, a data processor including a modem and error-correcting code and digital servo with a 16 b DSP, is for Blu-ray disc application. The chip dissipates 0.9 W at 1.8 V and 132 MHz, contains 12M transistors and occupies 50 mm/sup 2/ in 0.18 /spl mu/m CMOS technology.
international conference on consumer electronics | 2005
Joo-Seon Kim; GoangSeog Choi; Hyun-jeong Park; YoungJun Ahn; Myung-Sik Kim; KiSun Cho; TaeHo Lee; Myung-hee Han; JumHan Bae; Hyun-Soo Park; Yoon-Woo Lee; Soo-yul Jung; Joong-eon Seo; Dong-Ho Shin
This work presents a 0.18 /spl mu/m CMOS system on a chip (SoC) that is a hardware platform for the front-end of DVD-multi recorders (FESOC). It has one 32 bit RISC CPU and one 16 bit DSP as well as most of the necessary components for DVD recorders, except for an analog front end (AFE) and some memories. The necessary building blocks are a partial response channel maximum likelihood detector (PRML), a servo signal processor (SERVO), write strategy controller (WSC), a data processor (DP), an AT-attachment packet interface (ATAPI), and a micro computer unit (MCU). Using a three-layered bus architecture enables this FESOC to work well with a 16 bit-wide bus at 67 MHz for 8/spl times/ DVD operation, and to be implemented with a short development time. The FESOC is fabricated in 0.18 /spl mu/m 1-poly 5-metal CMOS technology. It contains 8.4 million transistors in a 46 mm/sup 2/ die and consumes 1.4 W with a channel clock of 209.28 MHz in 8/spl times/ operation mode.
international conference on consumer electronics | 2007
JumHan Bae; Joo-Seon Kim; Hyun-Soo Park; Hyun-jeong Park; YoungJun Ahn; Myung-Sik Kim; Jungwon Lee; In-Sik Park; GoangSeog Choi
This paper introduces a reconfigurable front-end system that consists of a RF chip and two data processors (DPs). The system has the capability of reading BD/DVD/CDs and recording BD/DVDs. It can be implemented with a RF chip and a BD DP for BD mode and a RF chip and a DVD/CD DP for DVD/CD mode. The newly developed RF chip can process CD, DVD and BD. The presented BD DP can access the BD-R/ROM/RE at 2x speed. The adaptive partial response maximum likelihood (PRML) and optimum power control (OPC) algorithms for improving play ability and recordability of BDs are developed. Due to the proposed adaptive PRML, less than 2 times 10-4 of bit error rate (BER) is achieved with the tilt margin of ±0.6°. The presented OPC algorithm can reduce to the power errors of less than 3 percent in 3 seconds. The developed reconfigurable front-end system is fully verified with real BD/DVD/CDs. Three main chipset of front-end system is fabricated. A RF chip is fabricated in 0.65μm Bi-CMOS process technology and two DPs are fabricated in 0.18μm CMOS process technology.
IEEE Transactions on Consumer Electronics | 2009
JumHan Bae; GoangSeog Choi
A single front-end SOC with the capability to access all kinds of optical disc is presented. It has the capability to process CD/DVD/BD with maximum speed. It contains an analog front end (AFE), partial response maximum likelihood (PRML) detector, servo-control block, buffer control block etc. It also has numerous analog cores such as analog-to-digital converter (ADC) and phase locked loop (PLL) and digital macros such as digital signal processor (DSP), ARM microprocessor and memories. The presented SOC parallelizes the embedded blocks with the divided channel frequency to enable maximum speed access. It contains 32 million transistors in a 63 mm2 die, and is fabricated with 0.13 mum CMOS technology. It has a channel frequency of 530 MHz and a power consumption of 1.1 W at BD 1x speed. It was fully verified with CD/DVD/BD with maximum speed.
IEEE Transactions on Consumer Electronics | 2009
JumHan Bae; GoangSeog Choi
A 1.2 V current-mode 7th-order Bessel low pass filter (LPF) with programmable boosting gain for an optical disc front-end is presented. The wide cut-off frequency tuning is achieved by using current-mode buffers, triode region MOS resistors and varactors. The constant gm biasing and the current-mode oscillator ensure that frequency characteristics are robust to process, voltage and temperature variations. It covers a wide frequency tuning range of 1-140 MHz and speeds of CD 4x - BD 8x, for CD/DVD/BD. It has a low power consumption of 19 mW and a small size of 0.167 mm2, and is fabricated with 0.13 mum CMOS technology.
international interconnect technology conference | 2008
Hyun-Soo Park; H.B. Lee; H.-K. Jung; Zungsun Choi; JumHan Bae; Jong Won Hong; Kyung In Choi; B.L. Park; Eung-joon Lee; Joo-Seon Kim; Jung-hoo Lee; Gil Heyun Choi; Joo Tae Moon
Voltage ramp dielectric breakdown (VRBD) and time-dependent dielectric breakdown (TDDB) characteristics of ~40nm-wide Cu/SiO2 interconnect dielectrics were investigated. The addition of a SiH4 treatment before capping SiN deposition led to more uniform breakdown fields, and better TDDB performance. The integration of a Ti-based barrier resulted in the best uniformity of breakdown fields, and a dramatic enhancement of TDDB reliability. The relationship between the VRBD and the TDDB characteristics was discussed, and the effect of SiH4 treatment was analyzed using TEM.
IEICE Transactions on Electronics | 2007
GoangSeog Choi; JumHan Bae; Hyun-Soo Park
The front-end LSI having a capable of 2 x reading and writing of BD-R/RW/ROM is developed. Its readability is improved by adopting 5-tap adaptive partial response maximum likelihood (PRML) with the PR(a,b,c,d,e) type channel. Due to the proposed PRML, less than 2 x 10 -4 of the bit error rate (BER) is achieved with radial and tangential tilt margin of over ±0.6° on 25 GB disc. The method of an optimum power control (OPC) for stable writing of various BD-R/RW is proposed. The presented chip contains 14-million transistors in a 60 mm 2 dies, and is fabricated in 0.18 μm CMOS technology.
Archive | 1997
Hyun-jeong Park; Jin-Hwa Yang; JumHan Bae
Archive | 1997
JumHan Bae; Jin-Hwa Yang; Hyun-jeong Park; Byeong-Sung Cho; Sang-rok Han
대한전자공학회 학술대회 | 2011
JumHan Bae; Kwanho Kim; Tae Hee Kim; Seungbeom Lee; Younghoon Jeong; Kyuyul Choi; Sung-kyu Jang; YoungJun Ahn; Joo-Seon Kim