Tatsuo Sugiyama
Panasonic
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Publication
Featured researches published by Tatsuo Sugiyama.
The Japan Society of Applied Physics | 1993
Shuji Hirao; Tatsuo Sugiyama; Takehito Yoshida; Kousaku Yano; Noboru Nomura
The degradation of thin gate oxides connected with the interconnect under the interlayer dielectric(IlD) by Ar plasma inadiation was observed. The electric field of gate oxide breakdown and the total charge to breakdovn(QBD were dependent on the material of the ILD. The current density through the ILD, calculated from QBD, was nearly equal to the measured value. Plasma damage through the ILD is caused mainly by the leakage current of the ILD. A-3-3
Archive | 1996
Tatsuo Sugiyama; Shuji Hirao; Kousaku Yano; Noboru Nomura
Archive | 1997
Tokuhiko Tamaki; Tatsuo Sugiyama; Hiroaki Nakaoka
Archive | 1997
Kousaka Yano; Tatsuo Sugiyama; Satoshi Ueda; Noboru Nomura
Archive | 1995
Tokuhiko Tamaki; Tatsuo Sugiyama; Hiroaki Nakaoka
Archive | 1995
Noboru Nomura; Tatsuo Sugiyama; Satoshi Ueda; Kosaku Yano; 聡 上田; 龍男 杉山; 航作 矢野; 登 野村
Archive | 1996
Tatsuo Sugiyama; Kousaku Yano
Archive | 1995
Tatsuo Sugiyama; Shuji Hirao; Kousaku Yano; Noboru Nomura
Archive | 1995
Kousaku Yano; Tatsuo Sugiyama; Satoshi Ueda; Noboru Nomura
Archive | 2002
Satoshi Shibata; Junji Hirase; Tatsuo Sugiyama; Emi Kanasaki; Fumitoshi Kawase; Yasushi Naito
