Jyun-Yu Tsai

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

We have observed the

Gate-controlled spin splitting in GaN∕AlN quantum wells

k

Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

-dependent spin splitting in wurtzite

Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures

{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}∕\mathrm{Ga}\mathrm{N}

Investigation of an anomalous hump in gate current after negative-bias temperature- instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

heterostructures. An anomalous beating pattern was observed in Shubnikov--de Haas measurements due to the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the

On the Origin of Anomalous Off–Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

k

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement

-dependent spin splitting at high values of

High-k shallow traps observed by charge pumping with varying discharging times

k

Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors

is attributed to Dresselhaus term which is enhanced by the

Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

{\ensuremath{\Delta}}_{\mathrm{C}1}\text{\ensuremath{-}}{\ensuremath{\Delta}}_{\mathrm{C}3}