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Dive into the research topics where Kaan Oguz is active.

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Featured researches published by Kaan Oguz.


Journal of Applied Physics | 2016

Investigation of extrinsic damping caused by magnetic dead layer in Ta-CoFeB-MgO multilayers with perpendicular anisotropy

Noriyuki Sato; Kevin P. O'brien; Kent Millard; Brian S. Doyle; Kaan Oguz

We systematically investigated the influence of the dead layer, the oxidation degree of naturally oxidized MgO, the structure of adjacent nonmagnetic metal layers on the damping parameter, and the perpendicular anisotropy of Ta(Ru)/Co20Fe60B20/MgO and MgO/Co20Fe60B20/Ta films using the vector network analyzer ferromagnetic resonance measurement technique. MgO/Co20Fe60B20/Ta film shows almost twice larger extrinsic damping than that for Ta/Co20Fe60B20/MgO film, whereas the perpendicular anisotropy is much smaller. This two-fold enhancement of damping parameter is successfully explained by the extrinsic damping arises from the dead layer at the CoFeB-Ta interface through the Elliott-Yafet mechanism in addition to the conventional spin-pumping model. Furthermore, we found that the oxidation degree of naturally oxidized MgO has no significant impact on the damping parameter, while the perpendicular anisotropy for MgO/Co20Fe60B20/Ta film is enhanced by longer oxidation time.


Archive | 2015

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

Kaan Oguz; Mark L. Doczy; Brian S. Doyle; Uday Shah; David L. Kencke; Roksana Golizadeh Mojarad; Robert S. Chau


Archive | 2014

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Brian S. Doyle; Charles C. Kuo; Kaan Oguz; Uday Shah; Elijah V. Karpov; Roksana Golizadeh Mojarad; Mark L. Doczy; Robert S. Chau


Archive | 2014

Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers

Charles C. Kuo; Kaan Oguz; Mark L. Doczy; Brian S. Doyle; Satyarth Suri; Robert S. Chau; David L. Kencke; Roksana Golizadeh Mojarad; Anurag Chaudhry


Archive | 2014

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

Brian S. Doyle; David L. Kencke; Charles C. Kuo; Uday Shah; Kaan Oguz; Mark L. Doczy; Satyarth Suri; Clair C. Webb


Archive | 2011

Method for reducing size and center positioning of magnetic memory element contacts

Brian S. Doyle; Yong Ju Lee; Charles C. Kuo; David L. Kencke; Kaan Oguz; Roksana Golizadeh Mojarad; Uday Shah


Archive | 2013

DECREASED SWITCHING CURRENT IN SPIN-TRANSFER TORQUE MEMORY

Elijah V. Karpov; Brian S. Doyle; Kaan Oguz; Satyarth Suri; Robert S. Chau; Charles C. Kuo; Mark L. Doczy; David L. Kencke


Archive | 2013

High stability spintronic memory

Charles C. Kuo; Kaan Oguz; Brian S. Doyle; Elijah V. Karpov; Roksana Golizadeh Mojarad; David L. Kencke; Robert S. Chau


Archive | 2011

MEMORY WITH ELEMENTS HAVING TWO STACKED MAGNETIC TUNNELING JUNCTION (MTJ) DEVICES

Brian S. Doyle; Arijit Raychowdhury; Yong Ju Lee; Charles C. Kuo; Kaan Oguz; David L. Kencke; Robert S. Chau; Roksana Golizadeh Mojarad


Archive | 2016

Characterization of Magnetic Nanostructures for Spin-Torque Memory Applications with Macro- and Microscale Ferromagnetic Resonance

T Silva; H Nembach; J Shaw; Brian S. Doyle; Kaan Oguz; Kevin O’brien; Mark L. Doczy

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