Kalyan Biswas

Impact of Fin Width Scaling on RF/Analog Performance of Junctionless Accumulation-Mode Bulk FinFET

In this article, the RF and analog performance of junctionless accumulation-mode bulk FinFETs is analyzed by employing the variation of fin width so that it can be used as a high-efficiency RF integrated circuit design. The RF/analog performance evaluation has been carried out using the ATLAS 3D device simulator in terms of evaluation of figure-of-merits metrics such as transconductance (gm), gate-to-source/drain capacitances (Cgg), cutoff frequency (fT), and maximum frequency of oscillation (fmax). Apart from RF/analog performance investigation, the variation of ON-current to OFF-current ratio (ION/IOFF) and transconductance generation factor (gm/Ids) have also been carried out. From this study, it is observed that smaller fin width of the device improves its performance.

Design Issues in Beam Structures for Performance Enhancement of MEMS Based Capacitive Accelerometer

Structure of a MEMS based Capacitive Accelerometer has been analyzed in this paper. The symmetrical beam-mass structure with different interconnection has been investigated using Finite Element met...

Performance analysis of junctionless accumulation mode bulk FinFET with varying fin shape

In order to overcome the short channel effects because of the scaling of MOSFETs, FinFET structure has been a proven modification of the classical structure of MOSFETs. But any variation of the fin cross-sectional shape due to fabrication has an impact on the device performance. In this paper, we have evaluated the impact of fin cross-section shape on junctionless accumulation mode bulk FinFETs with thin fins and short channel length. We have shown that fin shape has considerable impact on performance of the device.

Structural design and optimization of MEMS based capacitive accelerometer

A MEMS Capacitive Accelerometer which have symmetrical beam-mass structure with different interconnection has been described in this paper. Design of a H-shaped beam capacitive accelerometer is described using finite element analysis software. Output voltage is calculated with respect to the given accelerations as well as sensitivity of the device is analyzed. To improve sensitivity of the device, two new connector structures has been proposed. For a particular acceleration displacement of the proof mass is increased almost 57% and 66% and the sensitivity has been improved from 7.71pF/g to 13.0pF/g and 13.8pF/g respectively.