Karl-Heinz Gebhardt
Infineon Technologies
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Publication
Featured researches published by Karl-Heinz Gebhardt.
international symposium on power semiconductor devices and ic's | 2011
Ralf Rudolf; Cajetan Wagner; Lincoln O'Riain; Karl-Heinz Gebhardt; Barbara Kuhn-Heinrich; Birgit von Ehrenwall; Andreas von Ehrenwall; Marc Strasser; Matthias Stecher; Ulrich Glaser; Stefano Aresu; Paul Kuepper; Alevtina Mayerhofer
In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with low on-resistances. To ensure the safe operation of the power devices, a superior robustness against high energetic pulses of different length and repetitions could be achieved. The isolation of the different voltage stages is ensured by deep trenches and highly doped buried layers.
Archive | 2014
Marc Strasser; Karl-Heinz Gebhardt; Ralf Rudolf; Lincoln O'Riain
Archive | 2017
Andreas Meiser; Till Schloesser; Detlef Weber; Karl-Heinz Gebhardt
Archive | 2017
Andreas Meiser; Karl-Heinz Gebhardt; Till Schloesser; Detlef Weber
Archive | 2016
Andreas Meiser; Till Schlösser; Karl-Heinz Gebhardt; Detlef Weber
Archive | 2014
Marc Strasser; Karl-Heinz Gebhardt; Ralf Rudolf; Lincoln O'Riain
Archive | 2014
Karl-Heinz Gebhardt; Ralf Rudolf; Lincoln O'Riain; Marc Strasser
Archive | 2013
Karl-Heinz Gebhardt; Ralf Rudolf; Lincoln O'Riain; Marc Strasser
Archive | 2013
Karl-Heinz Gebhardt; Ralf Rudolf; Lincoln O'Riain; Marc Strasser
Archive | 2013
Karl-Heinz Gebhardt; Ralf Rudolf; Lincoln O'Riain; Marc Strasser