Kazuhiro Oyama

A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability

This paper describes a new 600-V trench-gate high-conductivity insulated gate bipolar transistor (trench HiGT) that has both a low collector-emitter saturation voltage of 1.55 V at 200 and a tough short-circuit capability of more than 10 . The trench HiGT also has better tradeoff relationship between turn-off switching loss and collector-emitter saturation voltage compared to either an insulated gate bipolar transistor (IGBT) with a planar gate or a conventional trench gate. A reverse transfer capacitance that is 50% lower than that of the planar-gate IGBT and an input capacitance that is 40% lower than that of a conventional trench gate IGBT have been obtained for the trench HiGT.

A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer

A high-conductivity insulated gate bipolar transistor (IGBT) (HiGT) with a double diffused MOS structure and an n-type hole-barrier layer surrounding a p-layer (planar HiGT) is presented. The hole-barrier layer prevents the holes from flowing into the p-layer and stores them in the n-layer. The planar HiGT provides a better tradeoff between collector-emitter saturation voltage [VcE(sat)] and turn-off loss than conventional IGBTs, regardless of the injection efficiency of the p-layer on the collector side, while it maintains a high blocking voltage by controlling the sheet carrier concentration of the hole-barrier layer. The planar HiGT has a tough short-circuit capability of more than 10 mus at 125degC, with a saturation current similar to that of conventional IGBTs.

Novel 600-V trench high-conductivity IGBT (Trench HiGT) with short-circuit capability

This paper describes new 600-V trench high-conductivity IGBTs (trench HiGTs) that have lower on-state voltages of 1.42 and 1.55 V at 200 A/cm/sup 2/ and tough short-circuit capabilities of 5 and 10 /spl mu/s, respectively. These HiGT have a better trade-off between turn-off losses and on-state voltages than conventional trench IGBTs, even better than planar IGBTs. They also offer a lower reverse transfer capacitances (-50%) than the planar IGBT. The input capacitance obtained were lower (-30% to -60%) than that of a conventional trench IGBT.