Kerry Bernstein

Three-dimensional integrated circuits

Three-dimensional (3D) integrated circuits (ICs), which contain multiple layers of active devices, have the potential to dramatically enhance chip performance, functionality, and device packing density. They also provide for microchip architecture and may facilitate the integration of heterogeneous materials, devices, and signals. However, before these advantages can be realized, key technology challenges of 3D ICs must be addressed. More specifically, the processes required to build circuits with multiple layers of active devices must be compatible with current state-of-the-art silicon processing technology. These processes must also show manufacturability, i.e., reliability, good yield, maturity, and reasonable cost. To meet these requirements, IBM has introduced a scheme for building 3D ICs based on the layer transfer of functional circuits, and many process and design innovations have been implemented. This paper reviews the process steps and design aspects that were developed at IBM to enable the formation of stacked device layers. Details regarding an optimized layer transfer process are presented, including the descriptions of 1) a glass substrate process to enable through-wafer alignment; 2) oxide fusion bonding and wafer bow compensation methods for improved alignment tolerance during bonding; 3) and a single-damascene patterning and metallization method for the creation of high-aspect-ratio (6:1 108 vias/cm2), and extremely aggressive wafer-to-wafer alignment (submicron) capability.

Design space exploration for 3D architectures

As technology scales, interconnects have become a major performance bottleneck and a major source of power consumption for microprocessors. Increasing interconnect costs make it necessary to consider alternate ways of building modern microprocessors. One promising option is 3D architectures where a stack of multiple device layers with direct vertical tunneling through them are put together on the same chip. As fabrication of 3D integrated circuits has become viable, developing CAD tools and architectural techniques is imperative to explore the design space to 3D microarchitectures. In this article, we give a brief introduction to 3D integration technology, discuss the EDA design tools that can enable the adoption of 3D ICs, and present the implementation of various microprocessor components using 3D technology. An industrial case study is presented as an initial attempt to design 3D microarchitectures.

Scaling, power, and the future of CMOS

This paper briefly reviews the forces that caused the power problem, the solutions that were applied, and what the solutions tell us about the problem. As systems became more power constrained, optimizing the power became more critical; viewing power reduction from an optimization perspective provides valuable insights. Section III describes these insights in more detail, including why Vdd and Vth have stopped scaling. Section IV describes some of the low power techniques that have been used in the past in the context of the optimization framework. This framework also makes it easy to see the impact of variability, which is discussed in more detail in section V along with the adaptive mechanisms that have been proposed and deployed to minimize the energy cost. Section VI describes possible strategies for dealing with the slowdown in gate energy scaling, and the final section concludes by discussing the implications of these strategies for device designers

Ultralow-voltage, minimum-energy CMOS

Energy efficiency has become a ubiquitous design requirement for digital circuits. Aggressive supply-voltage scaling has emerged as the most effective way to reduce energy use. In this work, we review circuit behavior at low voltages, specifically in the subthreshold (Vdd < Vth) regime, and suggest new strategies for energy-efficient design. We begin with a study at the device level, and we show that extreme sensitivity to the supply and threshold voltages complicates subthreshold design. The effects of this sensitivity can be minimized through simple device modifications and new device geometries. At the circuit level, we review the energy characteristics of subthreshold logic and SRAM circuits, and demonstrate that energy efficiency relies on the balance between dynamic and leakage energies, with process variability playing a key role in both energy efficiency and robustness. We continue the study of energy-efficient design by broadening our scope to the architectural level. We discuss the energy benefits of techniques such as multiple-threshold CMOS (MTCMOS) and adaptive body biasing (ABB), and we also consider the performance benefits of multiprocessor design at ultralow supply voltages.

Device and Architecture Outlook for Beyond CMOS Switches

Sooner or later, fundamental limitations destine complementary metal-oxide-semiconductor (CMOS) scaling to a conclusion. A number of unique switches have been proposed as replacements, many of which do not even use electron charge as the state variable. Instead, these nanoscale structures pass tokens in the spin, excitonic, photonic, magnetic, quantum, or even heat domains. Emergent physical behaviors and idiosyncrasies of these novel switches can complement the execution of specific algorithms or workloads by enabling quite unique architectures. Ultimately, exploiting these unusual responses will extend throughput in high-performance computing. Alternative tokens also require new transport mechanisms to replace the conventional chip wire interconnect schemes of charge-based computing. New intrinsic limits to scaling in post-CMOS technologies are likely to be bounded ultimately by thermodynamic entropy and Shannon noise.

Interconnects in the third dimension: design challenges for 3D ICs

Despite generation upon generation of scaling, computer chips have until now remained essentially 2-dimensional. Improvements in on-chip wire delay and in the maximum number of I/O per chip have not been able to keep up with transistor performance growth; it has become steadily harder to hide the discrepancy. 3D chip technologies come in a number of flavors, but are expected to enable the extension of CMOS performance. Designing in three dimensions, however, forces the industry to look at formerly-two- dimensional integration issues quite differently, and requires the re-fitting of multiple existing EDA capabilities.

Design and CAD Challenges in sub-90nm CMOS Technologies

This paper discusses design challenges of scaled CMOS circuits insub-90nm technologies for high-performance digital applications.To continue scaling of the CMOS devices deep into sub-90nm tech-nologies,fully depleted SOI, strained-Si on SiGe, FinFETs withdouble gate, and even further, three-dimensional circuits will be uti-lizedto design high-performance circuits. We will discuss uniquedesign aspects and issues resulting from this scaling such as gate-to-body tunneling, self-heating, reliability issues, and process vari-ations.As the scaling approaches various physical limits, new SOIdesign issues such as Vt modulation due to leakage, low-voltageimpact ionization, and higher V{t,lin} to maintain adequate V{t,sat},continue to surface.With an eye towards the future, design andCAD issues related to sub-65nm device structures such as doublegate FinFET will be discussed.

Thermomechanical modeling of 3D electronic packages

Development of complex electronic packages requires a judicious combination of experimentation and modeling. Fabrication costs of electronic packaging prototypes can be prohibitive; therefore, the building of effective virtual prototypes provides an important challenge for the modeling community. Fortunately, finite-element modeling (FEM) has become sufficiently mature to allow technologists to develop reliable insights into the thermal and mechanical integrity of proposed structures. For modeling to be leveraged as an effective means of avoiding thermally related mechanical problems, the diversity in size scale found in three-dimensional electronic packages must be carefully considered and addressed. Employing three distinct examples, we summarize our experience and insights in applying FEM in order to make informed decisions in the early stages of product package research and development.

Mitigating Memory Wall Effects in High-Clock-Rate and Multicore CMOS 3-D Processor Memory Stacks

Three-dimensional chip (3-D) stacking technology provides a new approach to address the so-called memory wall problem. Memory processor chip stacking reduces this memory wall problem, permitting faster clock rates (with suitable processor logic) or permitting multicore access to shared memory using a large number of vertical vias between tiers in the stack, for ultrawide bit path transfer of data and address information to and from various levels of cache. Although a limited amount of parallel access is possible using conventional two-dimensional (2-D) chip memory-processor approaches, 3-D memory-processor stacking greatly extends this to much larger capacity memories. We evaluate high-clock-rate processors as well as shared memory processors with a large number of cores. Various architectural design options to reduce the impact of the memory wall on the processor performance are explored and validated through simulations. Certain architectural features can be implemented in a 3-D chip, such as an ultrawide, ultrashort vertical bus with low parasitic resistance and the elimination of conventional electrostatic discharge, and packaging parasitics required in multiple package 2-D solutions. The objective is to reduce the clocks per instruction figure of merit for high clock speeds in order to deliver significant performance levels. High-clock-rate processors can be designed with SiGe heterostructure bipolar transistors to obtain processors operating on the order of 16 or 32 GHz.

Dependability analysis of nano-scale FinFET circuits

FinFET technology has been proposed as a promising alternative for deep sub-micro bulk CMOS technology, because of its better scalability. Previous works have studied the performance or power advantages of FinFET circuits over bulk CMOS circuits. This paper provides the dependability analysis of FinFET circuits, studying the soft error vulnerability of FinFET circuits and the impact of process variation. Our experiments compare FinFET circuits against bulk CMOS circuits in both 32 nm and 45 nm technologies, showing that FinFET circuits have better dependability and scalability, which is indicated by better soft error immunity and less impact of process variation. It is concluded that FinFET-based circuit design is more robust than the bulk CMOS based circuit design