Edward J. Nowak
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Publication
Featured researches published by Edward J. Nowak.
radio frequency integrated circuits symposium | 2017
Josef S. Watts; Kumaran Sundaram; Kok Wai Chew; Steffen Lehmann; Shih Ni Ong; Wai Heng Chow; Lye Hock Chan; Jerome Mazurier; Christoph Schwan; Yogadissen Andee; Thomas Feudel; Luca Pirro; Elke Erben; Edward J. Nowak; Elliot John Smith; El Mehdi Bazizi; Thorsten Kammler; Richard Taylor; Bryan Rice; David L. Harame
We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.
Archive | 2007
Corey K. Barrows; Joseph Andrew Iadanza; Edward J. Nowak; Douglas W. Stout
Archive | 2008
Brent A. Anderson; Andres Bryant; Edward J. Nowak; Edmund J. Sprogis
Archive | 2013
Brent A. Anderson; Edward J. Nowak
Archive | 2013
Terence B. Hook; Edward J. Nowak
Archive | 2017
Brent A. Anderson; Edward J. Nowak
Archive | 2017
Brent A. Anderson; Edward J. Nowak
Archive | 2016
Brent A. Anderson; Jeffrey B. Johnson; Edward J. Nowak
Archive | 2006
Brent A. Anderson; Edward J. Nowak
Archive | 2018
Edward J. Nowak; Brent A. Anderson
