Kevin L. Beaman

A Comprehensive Study on Nanomechanical Properties of Various SiO2-Based Dielectric Films

This paper studies the nanomechanical properties, including hardness and Youngs modulus (both in a dry condition and in deionized water), fracture toughness, cohesive strength and scratch resistance of eight commonly used SiO2-based dielectric films, Boron Phosphosilicate Glass (BPSG), BPSG with Rapid Thermal Processing (RTP), Phosphosilicate Glass (PSG), Spin-On Dielectric (SOD), Plasma Enhanced Chemical Vapor Deposition (PECVD) Tetraethyl Orthosilicate (TEOS), high aspect ratio oxide (O3-TEOS), High Density Plasma Oxide (HDP), and Silane Oxide. Significant differences were found among these films. The effects of the nanomechanical properties on dielectric film reliability and CMP process are discussed.

Contrasting single-wafer and batch processing for memory devices

Single-wafer technology has been shown to improve memory device performance and ultimately improve product yield for several front-end-of-line (FEOL) processes. Single-wafer processes that are reviewed include silicon nitride for word-line cap, flash oxide-nitride-oxide dielectric, cell dielectric re-oxidation, and selective oxidation.