Khalid Hassan Hussein

Trend in power devices for electric and hybrid electric vehicles

Since the very successful release of the worlds first mass-produced HEV (hybrid electric vehicle) in 1997, the number of HEVs as well as EVs (electric vehicles) has been gradually increasing in major cities around the world. Reliable and efficient power devices transferring energy between the battery and the motor/generator represent the heart of the electric power-train that realizes the electric-mobility concept. The objective of this presentation is to give a quick preview of the early mass-produced power modules for EV/HEVs and to highlight the advancement achieved so far in addressing the automotive severe reliability and high performance requirements. The presentation will also cover some of the power devices trends in terms of the major pillars comprising automotive power modules: (1) power chip technology, (2) packaging technology, and (3) functional integration as shown in Fig. 1.

New compact, high performance 7 th Generation IGBT module with direct liquid cooling for EV/HEV inverters

This paper presents a new compact, direct liquid-cooled IGBT power module series (J1-Series) addressing major requirements for Electric and Hybrid Electric (EV/HEV) power-train inverter applications in terms of high power-density, light-weight, and high-reliability. The J1-Series is fitted with the latest state-of-the-art IGBT chips (7th Generation Carrier Stored Trench Bipolar Transistor (CSTBT)) with optimized Vce(sat)-vs-Eoff trade-off characteristic achieving high-efficiency and enabling compact designs with high power handling capability. The new IGBT module comes in a 6-in-1 circuit configuration compact package featuring the well proven wire-bond-less Direct Lead Bonding (DLB) approach for high-reliability and extended power cycling lifetime. The package also integrates a direct liquid-cooled Aluminum pin-fin for light-weight and durable performance. Compared to conventional EV/HEV modules, the new J1-Series package with 7th Generation IGBT chips achieves more than 10% power-loss reduction, 43% internal inductance reduction, 30% improved thermal performance, 40% foot-print reduction, and 76% weight reduction.