Khandker N. Quader

A 130.7mm 2 2-layer 32Gb ReRAM memory device in 24nm technology

ReRAM has been considered as one of the potential technologies for the next-generation nonvolatile memory, given its fast access speed, high reliability, and multi-level capability. Multiple-layered architectures have been used for several megabit test-chips and memory macros [1-3]. This paper presents a MeOx-based 32Gb ReRAM test chip developed in 24nm technology.

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

A 16 Gb 4-state MLC NAND flash memory augments the sustained program throughput to 34 MB/s by fully exercising all the available cells along a selected word line and by using additional performance enhancement modes. The same chip operating as an 8 Gb SLC device guarantees over 60 MB/s programming throughput. The newly introduced all bit line (ABL) architecture has multiple advantages when higher performance is targeted and it was made possible by adopting the ldquocurrent sensingrdquo (as opposed to the mainstream ldquovoltage sensingrdquo) technique. The general chip architecture is presented in contrast to a state of the art conventional circuit and a double size data buffer is found to be necessary for the maximum parallelism attained. Further conceptual changes designed to counterbalance the area increase are presented, hierarchical column architecture being of foremost importance. Optimization of other circuits, such as the charge pump, is another example. Fast data access rate is essential, and ways of boosting it are described, including a new redundancy scheme. ABL contribution to energy saving is also acknowledged.

NAND Flash Memory: Challenges and Opportunities

NAND flash offers a range of compelling benefits that will keep attracting mobile and enterprise application developers as engineers tackle the hard problems of scaling the technology to sub-20 nm.

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) and cost savings from an improved architecture and tightly packed peripheral circuits. Air gap [2,3] technology further improves write throughput by reducing neighbor interference and WL RC. A toggle mode 400Mb/s I/O interface reduces system overhead and enhances overall performance.

A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm

In the diverse world of NAND flash applications, higher storage capacity is not the only imperative. Increasingly, performance is a differentiating factor and is also a way of creating new markets or expanding existing markets. While conventional memory uses, for actual operations, every other cell along a selected word line (WL) (Takeuchi, 2006), this design simultaneously exercises them all. A performance improvement of at least 100% is derived from this all-bitline (ABL) architecture relative to conventional chips. Additional techniques push performance to even higher levels.