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Dive into the research topics where Kirk J. Strozewski is active.

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Featured researches published by Kirk J. Strozewski.


IEEE Design & Test of Computers | 2006

Logic design for printability using OPC methods

Kevin Lucas; Chi-Min Yuan; Robert Boone; Karl Wimmer; Kirk J. Strozewski; Olivier Toublan

The steps that create physical shape data in a typical logic device design-to-reticle flow are cell layout, place and route, tapeout, OPC or RET, data fracture, and reticle build. Here, we define OPC as the transformation of reticle data to compensate for lithographic and process distortions so that the final wafer pattern is as close to the target pattern-the designed layout-as possible. We define RETs as the general class of transformations for reticle data that aim to improve the patterning process window; therefore, OPC is a subset of RET. DFM is traditionally considered to be implemented at the cell layout or routing stages of this flow. Examples include the optimization of a layout based on critical-defect area, the addition of redundant contacts and vias, wire spreading, upsizing of metal landing pads, and the addition of dummy metal tiles to improve the planarity after chemical-mechanical planarization (CMP). We presented a detailed analysis of these techniques in an earlier work. In contrast, this article analyzes the possibility of extending these traditional methods into the OPC stage and introduces new post-tapeout RET methods for improving printability.


Archive | 2003

Method for forming a semiconductor device and structure thereof

Cindy K. Goldberg; Stanley M. Filipiak; John C. Flake; Yeong-Jyh T. Lii; Bradley P. Smith; Yuri E. Solomentsev; Terry G. Sparks; Kirk J. Strozewski; Kathleen C. Yu


Archive | 2002

Lithography correction method and device

Kirk J. Strozewski; Kevin D. Lucas; Marc Olivares; Chi-Min Yuan


Archive | 2003

Semiconductor fabrication method for making small features

Terry G. Sparks; Ajay Singhal; Kirk J. Strozewski


Archive | 2004

Layout modification using multilayer-based constraints

Kevin Lucas; Robert Boone; Mehul D. Shroff; Kirk J. Strozewski; Chi-Min Yuan; Jason T. Porter


Archive | 2002

Method for forming a passivation layer for air gap formation

Cindy K. Goldberg; Stanley M. Filipiak; John C. Flake; Yeong-Jyh T. Lii; Bradley P. Smith; Yuri E. Solomentsev; Terry G. Sparks; Kirk J. Strozewski; Kathleen C. Yu


Archive | 2002

Method for forming a passivation layer for air gap formation and structure thereof

Cindy Goldberg; Stanley M. Filipiak; John C. Flake; Yeong-Jyh T. Lii; Bradley P. Smith; Yuri E. Solomentsev; Terry Sparks; Kirk J. Strozewski; Kathleen C. Yu


Archive | 2002

Method for forming a semiconductor interconnect with multiple thickness

Kathleen C. Yu; Kirk J. Strozewski; Janos Farkas; Hector Sanchez; Yeong-Jyh T. Lii


Archive | 2005

Immersion Lithography Technique And Product Using A Protection Layer Covering The Resist

Kyle Patterson; Kirk J. Strozewski


Archive | 2004

Semiconductor device having a multiple thickness interconnect

Kathleen C. Yu; Kirk J. Strozewski; Janos Farkas; Hector Sanchez; Yeong-Jyh T. Lii

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Chi-Min Yuan

Carnegie Mellon University

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John C. Flake

Louisiana State University

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Janos Farkas

Freescale Semiconductor

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