Koh Masahara | Researchain

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Featured researches published by Koh Masahara.

Materials Science Forum | 2002

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Koh Masahara; Tetsuo Takahashi; Mitsuhiro Kushibe; Takaya Ohno; Johji Nishio; Kazutoshi Kojima; Yuuki Ishida; Takaya Suzuki; Tomoyuki Tanaka; Sadafumi Yoshida; Kazuo Arai

Materials Science Forum | 2000

Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure

Koh Masahara; Yuuki Ishida; Hajime Okumura; Tetsuo Takahashi; Mitsuhiro Kushibe; Takaya Ohno; Takahito Suzuki; Tomoyuki Tanaka; Sadafumi Yoshida; Kazuo Arai

Materials Science Forum | 2002

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Johji Nishio; Mitsuhiro Kushibe; Koh Masahara; Kazutoshi Kojima; Toshiyuki Ohno; Yuuki Ishida; Tetsuo Takahashi; Takaya Suzuki; Tomoyuki Tanaka; Sadafumi Yoshida; Kazuo Arai

Materials Science Forum | 2002

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Kazutoshi Kojima; Takaya Ohno; Junji Senzaki; Kenji Fukuda; Tatsuo Fujimoto; Masakazu Katsuno; Noboru Ohtani; Johji Nishio; Koh Masahara; Yuuki Ishida; Tetsuo Takahashi; Takaya Suzuki; Tomoyuki Tanaka; Sadafumi Yoshida; Kazuo Arai

Materials Science Forum | 2002

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Toshiyuki Ohno; Hirotaka Yamaguchi; Kazutoshi Kojima; Johji Nishio; Koh Masahara; Yuuki Ishida; Tetsuo Takahashi; Takaya Suzuki; Sadafumi Yoshida

Materials Science Forum | 2001

Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates

Koh Masahara; Mitsuhiro Kushibe; Hideo Ohno; Kazutoshi Kojima; Tetsuo Takahashi; Yuuki Ishida; Takaya Suzuki; Tomoyuki Tanaka; Sadafumi Yoshida; Kazuo Arai

Materials Science Forum | 2000

Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

Mitsuhiro Kushibe; Yuuki Ishida; Hajime Okumura; Tetsuo Takahashi; Koh Masahara; Takaya Ohno; Takahito Suzuki; Tomoyuki Tanaka; Sadafumi Yoshida; Kazuo Arai

Materials Science Forum | 2002

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

M. Hasegawa; Akihiro Miyauchi; Koh Masahara; Yuuki Ishida; Tetsuo Takahashi; Toshiyuki Ohno; Johji Nishio; Takaya Suzuki; Tomoyuki Tanaka; Sadafumi Yoshida; Kazuo Arai

Materials Science Forum | 2002

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Kazutoshi Kojima; Toshiyuki Ohno; Seiji Suzuki; Junji Senzaki; Shinsuke Harada; Kenji Fukuda; Mitsuhiro Kushibe; Koh Masahara; Yuuki Ishida; Sadafumi Yoshida; Tetsuo Takahashi; Takaya Suzuki; Tomoyuki Tanaka; Kazuo Arai

Materials Science Forum | 2002