Konstantinos Floros

A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor

Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks

Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer

A Dual Barrier InAlN/AlGaN/GaN HEMT on Si Substrate with Pt Based Gates

Realisation of Etching Indium-Included Materials in Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation and its Plasma Removal for GaN-Based Power Device Fabrications

Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications

Electrical Characterisation of InAlN/AlGaN/GaN HEMT on Si Substrate with Varying InAlN Thickness

Effect of SiH4 Inductively Coupled Plasma Surface Treatment On Low Temperature and Low Resistance Ohmic Contact for AlGaN/GaN-Based Power Device

Realisation of Low Annealing Temperature and Low Resistance Ohmic Contacts forAlGaN/GaN-Based Power Devices Via SiH4 Inductively Coupled Plasma Treatment