Kurt Hoffmann

Method for nondestructively reading memory cells of an MRAM memory

Configuration for self-referencing ferroelectric memory cells

Memory configuration including a plurality of resistive ferroelectric memory cells

Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells

Resistive ferroelectric storage cell

Storage assembly comprised of a plurality of resistive ferroelectric storage cells

Non-destructive read-out of MRAM memory cells involves normalizing actual cell resistance, comparing normalized and normal resistance values, detecting content from the result

Circuit for generating a reference voltage for reading out from a ferroelectric memory

Method for improving the read signal in a memory having passive memory elements

Evaluation configuration for semiconductor memories