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Dive into the research topics where Thomas Röhr is active.

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Featured researches published by Thomas Röhr.


european solid-state circuits conference | 2003

Emerging non-volatile memory technologies

Gerhard Müller; Nicolas Nagel; Cay-Uwe Dr. Pinnow; Thomas Röhr

The concept, the status and the respective challenges of the emerging non-volatile memory technologies are described. After discussing the magneto-resistive random access memory technology, the ferro-electric random access memory technology and the phase change memory technology, their key properties are summarized and compared to the well-established Flash memory technology. From that comparison the main challenges for the emerging technologies towards catching a significant fraction of the overall memory market are highlighted.


Archive | 2000

Method of fabricating semiconductor components

Thomas Röhr; Christine Dehm; Carlos Mazure-Espejo


Archive | 2006

Integrated memory arrangement based on resistive memory cells and production method

Thomas Röhr


Archive | 2001

Integrated memory having a differential sense amplifier

Thomas Röhr; Thomas Böhm; Heinz Hönigschmid; Georg Braun


Archive | 2005

Integration of 1T1R CBRAM memory cells

Ulrike Grüning von Schwerin; Thomas Happ; Cay-Uwe Dr. Pinnow; Thomas Röhr


Archive | 2001

Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configuration

Thomas Böhm; Georg Braun; Heinz Hönigschmid; Thomas Röhr


Archive | 2005

Microelectronic device with a plurality of storage elements in serial connection and method of producing the same

Thomas Röhr


Archive | 2001

Integrated memory having a bit line reference voltage, and a method for producing the bit line reference voltage

Thomas Böhm; Zoltan Manyoki; Robert Esterl; Thomas Röhr


Archive | 2001

Current driver configuration for MRAM

Thomas Böhm; Dietmar Gogl; Gerhard Müller; Thomas Röhr


Archive | 2001

Circuit configuration for generating a reference voltage for reading a ferroelectric memory

Georg Braun; Heinz Hönigschmid; Kurt Hoffmann; Oskar Kowarik; Thomas Röhr

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