Kyle Murray

Wavelength tuning and stabilization of microring-based filters using silicon in-resonator photoconductive heaters

We demonstrate that n-doped resistive heaters in silicon waveguides show photoconductive effects with high responsivities. These photoconductive heaters, integrated into microring resonator (MRR)-based filters, were used to automatically tune and stabilize the filters resonance wavelength to the input lasers wavelength. This is achieved without requiring dedicated defect implantations, additional material depositions, dedicated photodetectors, or optical power tap-outs. Automatic wavelength stabilization of first-order MRR and second-order series-coupled MRR filters is experimentally demonstrated. Open eye diagrams were obtained for data transmission at 12.5 Gb/s while the temperature was varied by 5 °C at a rate of 0.28 °C/s. We theoretically show that series-coupled MRR-based filters of any order can be automatically tuned by using photoconductive heaters to monitor the light intensity in each MRR, and sequentially aligning the resonance of each MRR to the lasers wavelength.

Crosstalk in SOI Microring Resonator-Based Filters

We experimentally investigate the interchannel and intrachannel crosstalk of first- and second-order microring resonator (MRR) filters fabricated on a silicon-on-insulator platform. We find that there is an MRR radius that maximizes the wavelength division multiplexing channel count given a waveguide geometry, a maximum tolerable insertion loss, and a minimum permissible adjacent channel isolation. The measured power penalties due to interchannel crosstalk of two-channel demultiplexers based on first-order and series-coupled MRR filters are presented as functions of channel spacing and adjacent channel isolation. Next, we compare the intrachannel crosstalk of first-order, cascaded, and series-coupled MRR add-drop filters. Our results show that first-order MRR devices are unsuitable for simultaneous add-drop operation at high data rates and small channel spacings. Intrachannel crosstalk of cascaded and series-coupled designs are measured as functions of the data rate and the level of detuning between the MRRs. Low intrachannel crosstalk power penalties are demonstrated for cascaded and series-coupled MRR filters for data rates up to 20 Gb/s. Based on the measured results, we present requirements for the input-to-through response of add-drop filters that will ensure low intrachannel crosstalk.

Dense dissimilar waveguide routing for highly efficient thermo-optic switches on silicon

We analyze and demonstrate a method for increasing the efficiency of thermo-optic phase shifters on a silicon-on-insulator platform. The lack of cross-coupling between dissimilar waveguides allows highly dense waveguide routing under heating elements and a corresponding increase in efficiency. We demonstrate a device with highly dense routing of 9 waveguides under a 10 µm wide heater and achieve a low switching power of 95 µW, extinction ratio greater than 20 dB, and less than 0.1 dB ripple in the through spectrum with a footprint of less than 800 µm × 180 µm. The increase in waveguide density is found not to negatively impact the switch response time.

Crosstalk Penalty in Microring-Based Silicon Photonic Interconnect Systems

We examine inter-channel and intra-channel crosstalk power penalties between non-return-to-zero on-off keying (NRZ-OOK) wavelength-division-multiplexing (WDM) channels for microring-based silicon photonic interconnects. We first propose a new model that relates the crosstalk power penalty to the interfering signals power, the extinction ratio of the non-return-to-zero, OOK modulated “victim” channel, and finally the bit-error-ratio that the power penalty is referenced to. As for inter-channel crosstalk, the proposed model agrees well with our recent experimental measurements. We leverage this model to quantify crosstalk induced power penalties in a microring based WDM receiver. We also propose an optimization procedure to equilibrate the power penalty across channels. We then compare our model with intra-channel crosstalk measurements, where two NRZ channels are at the same wavelength and are simultaneously routed to different paths by two cascaded ring resonators. We remark that intra-channel crosstalk is very sensitive to the data rate of NRZ channels. As data rate increases, the observed disturbances exceed what models predict. Based on these observations, we propose an empirical modification of the original model for estimating intra-channel crosstalk power penalties in high (>20 Gb/s) data rate situations.

Silicon-on-Insulator Modulators Using a Quarter-Wave Phase-Shifted Bragg Grating

We demonstrate, on the silicon-on-insulator platform, a modulator that uses a quarter-wave phase-shifted Bragg grating resonator. The modulator has open eye diagrams at data rates of up to 32 Gb/s. A bit error ratio of less than 10-10 is demonstrated using a 231 - 1 pseudorandom binary sequence pattern at a data rate of 25 Gb/s.

Michelson Interferometer Thermo-Optic Switch on SOI With a 50-

We demonstrate photonic ultra-efficient thermo-optic switches on a 220-nm silicon-on-insulator platform. We used several approaches to increase the tuning efficiency of the switches. We used folded waveguides in a Michelson interferometer configuration to increase the optical interaction length of the light with the heated region, and used a suspended structure to improve thermal isolation. An ultra-low switching power of 50 μW is realized with an extinction ratio of over 26 dB for the transverse electric mode at 1550 nm. The 10%–90% response time of the switch is 1.28 ms, including a 780 μs rise time and a 500 μs fall time. Compared with the best thermo-optic switch in the literature, our device shows approximately an order of magnitude reduction in power consumption.

\mu \text{W}

A resonance-enhanced, defect-mediated, ring resonator photodetector has been implemented as a single unit biosensor on a silicon-on-insulator platform, providing a cost effective means of integrating ring resonator sensors with photodetectors for lab-on-chip applications. This method overcomes the challenge of integrating hybrid photodetectors on the chip. The demonstrated responsivity of the photodetector-sensor was 90 mA/W. Devices were characterized using refractive index modified solutions and showed sensitivities of 30 nm/RIU.

Power Consumption

We demonstrate large-area silicon-on-insulator ring resonators with Q values of about 2×106 at critical coupling and 3.6×106 for heavily undercoupled conditions. A model has been developed to understand the impact of waveguide backscattering and subcomponent imperfections on the spectral response of our devices. The model predicts the appearance of signals at ports that would not have them under backscattering-free, ideal-power-splitting conditions. The predictions of our model are shown to match the phenomena observed in our measurements.

Silicon-on-insulator sensors using integrated resonance-enhanced defect-mediated photodetectors

A low power electro-optic switch based on the electrostatic deformation of suspended silicon waveguides is proposed. Simulated results show complete switching of power with an applied voltage of 1.2 V for a 270 μm long directional coupler switch. The device footprint is less than 270 μm × 10 μm.