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Dive into the research topics where Kyung-woo Kang is active.

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Featured researches published by Kyung-woo Kang.


Proceedings Particle Accelerator Conference | 1995

Design of 1.2 GeV synchrotron light source for X-ray lithography at Samsung Heavy Industries

Keeman Kim; Bumsoo Han; Ki-Hun Joh; Sungmyun Kim; Byungmun Kim; Heunggyu Park; Jong-pil Park; Jin-Soo Kim; Wongu Kang; Kyung-woo Kang; Yuri Kim; Sang-Il Lee; Young-Hee Kim

An 1.2 GeV electron storage ring being designed at Samsung Heavy Industries Daeduk R&D Center is optimized for X-ray lithography works for high density semiconductor devices and micro-machining. The lattice is a variation of a FODO arrangement with four quadrupole doublets. The circumference of 57.6 m includes four 2.1-m-long straight sections and two 3.09-m-long dispersion-free straight sections making the synchrotron a racetrack shape. Two dispersion-free straight sections are located between the doublets and reserved for diagnostics and insertion devices. The harmonic number is 96 and the corresponding RF frequency is 449.654 MHz. The critical X-ray wavelength from sixteen 1.16-m-long bending magnets is 9.55 /spl Aring/ and a superconducting wiggler is also included in the design considerations. The major features of the light source will be described.


Proceedings Particle Accelerator Conference | 1995

Applications of industrial electron accelerators at Samsung Heavy Industries

Bumsoo Han; Keeman Kim; Ki-Hun Joh; Sungmyun Kim; Heunggyu Park; Jong-pil Park; Jin-Soo Kim; Wongu Kang; Kyung-woo Kang; Yuri Kim; Sang-Il Lee; Young-Hee Kim

An industrial electron beam accelerator has been developed at Samsung Heavy Industries with the collaboration of Seoul National University and Russian Budker Institute of Nuclear Physics. The accelerator is a high voltage accelerator using rectifiers and able to deliver 40 mA of 1 MeV electrons in CW mode. Functionally, the accelerator is an electron irradiation processing device and an electron beam scanning system is employed for the uniform irradiation of the electron beam through the extraction window of the size 980 mm/spl times/75 mm. The industrial applications of the electron irradiation processes include combustion flue gas purification process, treatment of industrial waste water containing refractory pollutant, treatment of semiconductor devices, and radio-chemical processes. The major features of the device and its industrial applications will be described.


Archive | 2001

Multi-bank memory devices having bank selection switches therein that enable efficient sense amplifier utilization

Kyung-woo Kang


Archive | 1995

Data output buffer of a semiconductor integrated circuit

Kyung-woo Kang


Archive | 2003

Semiconductor memory device having preamble function

Kyung-woo Kang


Archive | 1996

Memory device with fast extended data out (EDO) mode and methods of operation therefor

Sang-Gil Shin; Kyung-woo Kang


Archive | 2004

Integrated circuit memory device power supply circuits and methods of operating same

Kyung-woo Kang


Archive | 1998

Input buffers and controlling methods for integrated circuit memory devices that operate with low voltage transistor-transistor logic (LVTTL) and with stub series terminated transceiver logic (SSTL)

Sang-joon Hwang; Kyung-woo Kang


Archive | 1996

Bit line sense amplifier of semiconductor memory device

Kyung-woo Kang


Archive | 2004

Mismatched on-die termination circuits and termination methods therefor

Sang-joon Hwang; Young-Hyun Jun; Kyung-woo Kang; Seong-Jin Jang

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Jin-Soo Kim

Sungkyunkwan University

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