L. Jan Anton Koster

The effect of three-dimensional morphology on the efficiency of hybrid polymer solar cells

The efficiency of polymer solar cells critically depends on the intimacy of mixing of the donor and acceptor semiconductors used in these devices to create charges and on the presence of unhindered percolation pathways in the individual components to transport holes and electrons. The visualization of these bulk heterojunction morphologies in three dimensions has been challenging and has hampered progress in this area. Here, we spatially resolve the morphology of 2%-efficient hybrid solar cells consisting of poly(3-hexylthiophene) as the donor and ZnO as the acceptor in the nanometre range by electron tomography. The morphology is statistically analysed for spherical contact distance and percolation pathways. Together with solving the three-dimensional exciton-diffusion equation, a consistent and quantitative correlation between solar-cell performance, photophysical data and the three-dimensional morphology has been obtained for devices with different layer thicknesses that enables differentiating between generation and transport as limiting factors to performance.

Origin of the enhanced performance in poly(3-hexylthiophene): [6,6]-phenyl C61-butyric acid methyl ester solar cells upon slow drying of the active layer

The origin of the enhanced performance of bulk heterojunction solar cells based on slowly dried films of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester is investigated, combining charge transport measurements with numerical device simulations. Slow drying leads to a 33-fold enhancement of the hole mobility up to 5.0×10−7m2V−1s−1 in the P3HT phase of the blend, thereby balancing the transport of electrons and holes in the blend. The resulting reduction of space-charge accumulation enables the use of thick films (∼300nm), absorbing most of the incoming photons, without losses in the fill factor and short-circuit current of the device.

Competition between recombination and extraction of free charges determines the fill factor of organic solar cells

Among the parameters that characterize a solar cell and define its power-conversion efficiency, the fill factor is the least well understood, making targeted improvements difficult. Here we quantify the competition between charge extraction and recombination by using a single parameter θ, and we demonstrate that this parameter is directly related to the fill factor of many different bulk-heterojunction solar cells. Our finding is supported by experimental measurements on 15 different donor:acceptor combinations, as well as by drift-diffusion simulations of organic solar cells in which charge-carrier mobilities, recombination rate, light intensity, energy levels and active-layer thickness are all varied over wide ranges to reproduce typical experimental conditions. The results unify the fill factors of several very different donor:acceptor combinations and give insight into why fill factors change so much with thickness, light intensity and materials properties. To achieve fill factors larger than 0.8 requires further improvements in charge transport while reducing recombination.

Quantifying bimolecular recombination losses in organic bulk heterojunction solar cells

We present a new experimental technique that affords direct quantification of the fraction of charge carriers lost in poly(3-hexylthiophene): fullerene solar cells by bimolecular recombination. Depending on annealing conditions up to 17% of carriers recombine bimolecularly under solar illumination. We explain our findings with a closed analytical expression for the photocurrent generated by an organic solar cell.

Discriminating between bilayer and bulk heterojunction polymer:fullerene solar cells using the external quantum efficiency.

The morphology of the active layer in polymer:fullerene solar cells is a key parameter for the performance. We compare bilayer poly(3-hexylthiophene)/[6,6]-phenyl-C(61)-butyric acid methyl ester (P3HT/PCBM) solar cell devices produced from orthogonal solvents before and after thermal annealing with P3HT:PCBM bulk heterojunction solar cells produced from a single solvent. By comparing the spectral shape and magnitude of the experimental and theoretically modeled EQEs we show that P3HT/PCBM bilayers made via orthogonal solution processing do not lead to bilayers with a sharp interface but that partial intermixing has occurred. Thermal annealing of these diffusive P3HT/PCBM bilayers leads to increased mixing but does not result in the same mixed bulk heterojunction morphology that is obtained when P3HT and PCBM are cast simultaneously from single solution. For thicker layers, the annealed bilayers significantly outperform the bulk heterojunction devices with the same nominal composition and same total thickness.

Polaron hopping mediated by nuclear tunnelling in semiconducting polymers at high carrier density

The transition rate for a single hop of a charge carrier in a semiconducting polymer is assumed to be thermally activated. As the temperature approaches absolute zero, the predicted conductivity becomes infinitesimal in contrast to the measured finite conductivity. Here we present a uniform description of charge transport in semiconducting polymers, including the existence of absolute-zero ground-state oscillations that allow nuclear tunnelling through classical barriers. The resulting expression for the macroscopic current shows a power-law dependence on both temperature and voltage. To suppress the omnipresent disorder, the predictions are experimentally verified in semiconducting polymers at high carrier density using chemically doped in-plane diodes and ferroelectric field-effect transistors. The renormalized current-voltage characteristics of various polymers and devices at all temperatures collapse on a single universal curve, thereby demonstrating the relevance of nuclear tunnelling for organic electronic devices.

Recombination in Perovskite Solar Cells: Significance of Grain Boundaries, Interface Traps, and Defect Ions

Trap-assisted recombination, despite being lower as compared with traditional inorganic solar cells, is still the dominant recombination mechanism in perovskite solar cells (PSCs) and limits their efficiency. We investigate the attributes of the primary trap-assisted recombination channels (grain boundaries and interfaces) and their correlation to defect ions in PSCs. We achieve this by using a validated device model to fit the simulations to the experimental data of efficient vacuum-deposited p–i–n and n–i–p CH3NH3PbI3 solar cells, including the light intensity dependence of the open-circuit voltage and fill factor. We find that, despite the presence of traps at interfaces and grain boundaries (GBs), their neutral (when filled with photogenerated charges) disposition along with the long-lived nature of holes leads to the high performance of PSCs. The sign of the traps (when filled) is of little importance in efficient solar cells with compact morphologies (fused GBs, low trap density). On the other hand, solar cells with noncompact morphologies (open GBs, high trap density) are sensitive to the sign of the traps and hence to the cell preparation methods. Even in the presence of traps at GBs, trap-assisted recombination at interfaces (between the transport layers and the perovskite) is the dominant loss mechanism. We find a direct correlation between the density of traps, the density of mobile ionic defects, and the degree of hysteresis observed in the current–voltage (J–V) characteristics. The presence of defect states or mobile ions not only limits the device performance but also plays a role in the J–V hysteresis.

Charge transport in MDMO-PPV:PCNEPV all-polymer solar cells

Charge transport properties are investigated of blends of poly [2-methoxy-5-(3′, 7′-dimethyloctyloxy)-1,4-phenylene vinylene] (MDMO-PPV) and poly-[oxa-1,4-phenylene-(1-cyano-1,2-vinylene)-(2-methoxy-5-(3′, 7′-dimethyloctyloxy)-1,4-phenylene)-1,2-(2-cyanovinylene)-1,4-phenylene] (PCNEPV). The hole transport in the MDMO-PPV donor phase of the 1:1 weight ratio blend is trap-free space-charge limited, with a mobility identical to the pristine polymer. The electron current in the PCNEPV acceptor phase is strongly reduced by traps that are exponentially distributed in energy. The current in MDMO-PPV:PCNEPV bulk heterojunction solar cells is therefore unbalanced and dominated by the holes in the MDMO-PPV phase.

A New Figure of Merit for Organic Solar Cells with Transport-limited Photocurrents

Compared to their inorganic counterparts, organic semiconductors suffer from relatively low charge carrier mobilities. Therefore, expressions derived for inorganic solar cells to correlate characteristic performance parameters to material properties are prone to fail when applied to organic devices. This is especially true for the classical Shockley-equation commonly used to describe current-voltage (JV)-curves, as it assumes a high electrical conductivity of the charge transporting material. Here, an analytical expression for the JV-curves of organic solar cells is derived based on a previously published analytical model. This expression, bearing a similar functional dependence as the Shockley-equation, delivers a new figure of merit α to express the balance between free charge recombination and extraction in low mobility photoactive materials. This figure of merit is shown to determine critical device parameters such as the apparent series resistance and the fill factor.

High Gain Hybrid Graphene–Organic Semiconductor Phototransistors

Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a photoresist-free recipe to create large-area graphene transistors made out of graphene grown by chemical vapor deposition. Low transit time devices are fabricated out of mechanically exfoliated graphene on top of mechanically exfoliated hexagonal boron nitride using standard e-beam lithography. Responsivities exceeding 10(5) A/W are obtained for the low transit time devices.