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Lance Scudder

Fujitsu

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Publication

Featured researches published by Lance Scudder.

Archive | 2010

Advanced transistors with threshold voltage set dopant structures

Lucian Shifren; Pushkar Ranade; Lance Scudder

Archive | 2013

Reducing or eliminating pre-amorphization in transistor manufacture

Lance Scudder; Pushkar Ranade; Charles Stager; Urupattur C. Sridharan; Dalong Zhao

Archive | 2013

Deeply depleted mos transistors having a screening layer and methods thereof

Thomas Hoffmann; Lucian Shifren; Scott E. Thompson; Pushkar Ranade; Jing Wang; Paul E. Gregory; Sachin R. Sonkusale; Lance Scudder; Dalong Zhao; Teymur Bakhishev; Yujie Liu; Lingquan Wang; Weimin Zhang; Sameer Pradhan; Michael Duane; Sung Hwan Kim

Archive | 2013

Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom

Scott E. Thompson; Lucian Shifren; Pushkar Ranade; Lance Scudder; Dalong Zhao; Teymur Bakhisher; Sameer Pradhan

Archive | 2012

CMOS structures and processes based on selective thinning

Scott E. Thompson; Thomas Hoffmann; Lance Scudder; Urupattur C. Sridharan; Dalong Zhao; Pushkar Ranade; Michael Duane; Paul E. Gregory

Archive | 2012

Semiconductor devices with dopant migration suppression and method of fabrication thereof

Sameer Pradhan; Dalong Zhao; Lingquan Wang; Pushkar Ranade; Lance Scudder

Archive | 2013

Semiconductor structure with multiple transistors having various threshold voltages

Dalong Zhao; Teymur Bakhishev; Lance Scudder; Paul E. Gregory; Michael Duane; Urupattur C. Sridharan; Pushkar Ranade; Lucian Shifren; Thomas Hoffmann

Archive | 2012

Method for substrate preservation during transistor fabrication

Lance Scudder; Pushkar Ranade; Dalong Zhao; Teymur Bakhishev; Urupattur C. Sridharan; Taiji Ema; Toshifumi Mori; Mitsuaki Hori; Junji Oh; Kazushi Fujita; Yasunobu Torii

Archive | 2012

Semiconductor structure with reduced junction leakage and method of fabrication thereof

Lingquan Wang; Teymur Bakhishev; Dalong Zhao; Pushkar Ranade; Sameer Pradhan; Thomas Hoffmann; Lucian Shifren; Lance Scudder

Archive | 2012

Semiconductor structure with substitutional boron and method for fabrication thereof

Lance Scudder; Pushkar Ranade; Charles Stager; Lucian Shifren; Dalong Zhao; Urupattur C. Sridharan; Michael Duane

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Collaboration

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Pushkar Ranade

Fujitsu

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Dalong Zhao

Fujitsu

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Urupattur C. Sridharan

Fujitsu

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Michael Duane

Fujitsu

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Teymur Bakhishev

Fujitsu

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Thomas Hoffmann

Fujitsu

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Paul E. Gregory

Fujitsu

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Sameer Pradhan

Fujitsu

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Lucian Shifren

Intel

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Lingquan Wang

Fujitsu

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