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Teymur Bakhishev

Fujitsu

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Publication

Featured researches published by Teymur Bakhishev.

Archive | 2013

Deeply depleted mos transistors having a screening layer and methods thereof

Thomas Hoffmann; Lucian Shifren; Scott E. Thompson; Pushkar Ranade; Jing Wang; Paul E. Gregory; Sachin R. Sonkusale; Lance Scudder; Dalong Zhao; Teymur Bakhishev; Yujie Liu; Lingquan Wang; Weimin Zhang; Sameer Pradhan; Michael Duane; Sung Hwan Kim

Archive | 2016

Method for fabricating a transistor device with a tuned dopant profile

Teymur Bakhishev; Sameer Pradhan; Thomas Hoffmann; Sachin R. Sonkusale

Archive | 2015

Method for fabricating a transistor with reduced junction leakage current

Scott E. Thompson; Lucian Shifren; Pushkar Ranade; Yujie Liu; Sung Hwan Kim; Lingquan Wang; Dalong Zhao; Teymur Bakhishev; Thomas Hoffmann; Sameer Pradhan; Michael Duane

Archive | 2013

Semiconductor structure with multiple transistors having various threshold voltages

Dalong Zhao; Teymur Bakhishev; Lance Scudder; Paul E. Gregory; Michael Duane; Urupattur C. Sridharan; Pushkar Ranade; Lucian Shifren; Thomas Hoffmann

Archive | 2012

Method for substrate preservation during transistor fabrication

Lance Scudder; Pushkar Ranade; Dalong Zhao; Teymur Bakhishev; Urupattur C. Sridharan; Taiji Ema; Toshifumi Mori; Mitsuaki Hori; Junji Oh; Kazushi Fujita; Yasunobu Torii

Archive | 2012

Semiconductor structure with reduced junction leakage and method of fabrication thereof

Lingquan Wang; Teymur Bakhishev; Dalong Zhao; Pushkar Ranade; Sameer Pradhan; Thomas Hoffmann; Lucian Shifren; Lance Scudder

Archive | 2015

EMBEDDED CHANNEL TYPE DEEP DEPLETION CHANNEL TRANSISTOR

Teymur Bakhishev; Wang Lingquan; Dalong Zhao; Pushkar Ranade; Scott E. Thompson

Archive | 2014

High uniformity screen and epitaxial layers for CMOS devices

Scott E. Thompson; Lucian Shifren; Pushkar Ranade; Yujie Liu; Sung Hwan Kim; Lingquan Wang; Dalong Zhao; Teymur Bakhishev; Thomas Hoffmann; Sameer Pradhan; Michael Duane

Archive | 2014

Buried channel deeply depleted channel transistor

Teymur Bakhishev; Lingquan Wang; Dalong Zhao; Pushkar Ranade; Scott E. Thompson

Archive | 2013

SEMICONDUCTOR STRUCTURE WITH MULTIPLE TRANSISTORS HAVING VARIOUS THRESHOLD VOLTAGES AND METHOD OF FABRICATION THEREOF

Dalong Zhao; Teymur Bakhishev; Lance Scudder; Paul E. Gregory; Michael Duane; Urupattur C. Sridharan; Pushkar Ranade; Lucian Shifren; Thomas Hoffmann

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Dalong Zhao

Fujitsu

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Pushkar Ranade

Fujitsu

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Thomas Hoffmann

Fujitsu

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Lingquan Wang

Fujitsu

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Michael Duane

Fujitsu

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Sameer Pradhan

Fujitsu

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Lance Scudder

Fujitsu

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Lucian Shifren

Intel

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Scott E. Thompson

Intel

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Sung Hwan Kim

Fujitsu

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