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Dive into the research topics where Laurent Quiquerez is active.

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Featured researches published by Laurent Quiquerez.


international new circuits and systems conference | 2015

A time-integration based quenching circuit for Geiger-mode avalanche diodes

M. M. Vignetti; Francis Calmon; R. Cellier; Patrick Pittet; Laurent Quiquerez; A. Savoy-Navarro

In this paper, a time-integration based passive quenching - active recharge circuit for Geiger-mode avalanche diodes has been proposed with the aim of minimizing the avalanche charge and providing a hold-off time tunable within wide range. These are indeed important features to be taken into account in the design of the avalanche diode quenching - reset electronics. Furthermore a hold-off time tunable within a wide range is typically desirable in every application where a full characterization of the device dark count rate is required. A correct operation of the proposed circuit, designed in a commercial High-Voltage CMOS 0.35um technology, is assessed through circuit simulations as well as Monte Carlo analysis in the Cadence Environment.


international conference on electronics, circuits, and systems | 2006

Noise Modeling For Charge Amplification and Sampling

Patrick Pittet; Guo-Neng Lu; Laurent Quiquerez

A new cyclostationarity-based analytical model for noise analysis of a charge amplifier followed by a correlated double sampling (CDS) circuit is proposed. It determines output noise (power spectral density and squared voltage) resulting from input noise voltages and currents. Model validation is performed by comparing the obtained results with those of temporal noise simulations. This model allows analysis of consequences of CDS and integration duration on noise contributions. It predicts that CDS does not suppress or attenuate effect of input current sources. In the case of 1/f input noise current, the SNR can not be improved by increasing the integration duration.


MEMS, MOEMS, and micromachining. Conference | 2004

A VHDL-AMS package for microsystems polychromatic optical modeling

Laurent Quiquerez; Siomar Ouaaziz; Patrick Pittet; Guo-Neng Lu

For biomedical microanalysis systems requiring implementation of optical signal generation and detection, we propose a package of VHDL-AMS functions to allow co-simulations of optical path, opto-electronic elements and associated electronics. This package contains a set of functions, which may be used for functional description of parts of microanalysis systems. An overview of simulation techniques shows that VHDL-AMS allows continuous-time simulation of polychromatic optical signals needed by the wavelength shifting nature of fluorescence. Indeed, directivity of optic path is well managed by VHDL-AMS using directional ports. By design, optical signals are easily simulated together with associated command and processing electronic circuits. Inspired by RF simulation techniques, the proposed description of polychromatic optical signals lies on a discretization of spectra. This format allows each optic band to be processed independently by models. The array data structure available in VHDL-AMS provides a compact form to device descriptions and to optical signal connexions. Fluorescence is modelled with absorbance and emission spectra, and optical couplings are described using results of geometric-optic analysis. A “spectral plug-in” has been developed, to be connected to output-power models of LASER-LED reported in the literature. Furthermore, a physical model of the CMOS Buried Double Junction (BDJ) detector has been described. Models of optic and electronic parts include a modulated LASER source, fibre optic, fluorochrom, BDJ detector and Constant Voltage Threshold (CVT) analogue-to-digital signal conversion. The system-level simulations, with Variable-Time Synchronous Detection (VTSD) are performed using the “Advanced-MS” environment. The validity domain of this approach as well as limitations of the available VHDL-AMS simulators (especially in terms of convergence and simulation time) are discussed.


Microelectronics Journal | 2015

Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

M. M. Vignetti; Francis Calmon; R. Cellier; Patrick Pittet; Laurent Quiquerez; A. Savoy-Navarro

The goal of this paper is to provide some useful design guidelines at the device level regarding the main challenges to be typically faced in the design and integration of Geiger-mode avalanche diodes in a standard CMOS process. Different techniques are found in literature in order to avoid premature edge breakdown with the aim of limiting the electric field at the edges to be weaker than in the multiplication region. In this article, the use of such techniques, the conditions where they can effectively work and above all their limitations are studied by means of TCAD simulations for various diode architectures. Additionally, the noise performance is discussed by focusing on the band-to-band tunneling and shallow trench isolation enhanced dark count rates. Geiger-mode bias techniques as well as a synthesis on the pros and cons of the various avalanche diode architectures are finally presented aiming at facilitating future design choices.


Journal of Instrumentation | 2015

Preliminary simulation study of a coincidence Avalanche Pixel Sensor

M. M. Vignetti; Francis Calmon; R. Cellier; Patrick Pittet; Laurent Quiquerez; A. Savoy-Navarro

In this paper a preliminary study of coincidence Avalanche Pixel Sensors (APiX) for High Energy Physics (HEP) applications is presented. In this preliminary work, some PEB prevention techniques found in literature have been studied by TCAD simulations adopting 2D Cylindrical geometrical models and 130nm CMOS process technological data.


Detectors and associated signal processing. Conference | 2004

CMOS photodetection system with variable-time synchronous detection

Patrick Pittet; Guo-Neng Lu; Michel Pitaval; Laurent Quiquerez

For sensitive fluorescence detection requiring weak signal recovery, we propose a novel digital synchronous detection method. It is based on a voltage/time duality concept which, compared to a conventional approach, consists of transformation of constant sampling rate with voltage measurement into variable-time sampling with constant threshold voltage. This Variable-Time Synchronous Detection (VTSD) method ensures a constant SNR over a large dynamic range, with optimised measuring rate. It can be implemented without any precise analogue-to-digital converter. A CMOS photodetection system with implementation of this VTSD method together with charge amplification is designed and tested. The results confirm its ability to recover photocurrent signals at femto-Ampers levels.


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2010

A charge-sensitive amplifier associated with APD or PMT for 511 KeV, photon-pair detection

H. Mathez; Guo-Neng Lu; Patrick Pittet; Laurent Quiquerez; Patrice Russo; Jacques Lecoq; Gérard Bohner


Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2018

3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection

M. M. Vignetti; Francis Calmon; Patrick Pittet; G. Pares; R. Cellier; Laurent Quiquerez; T. Chaves de Albuquerque; E. Bechetoille; E. Testa; J.-P. Lopez; D. Dauvergne; A. Savoy-Navarro


Forum de la Recherche en Cancérologie Auvergne-Rhône-Alpes 2017 | 2017

3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for Hadrontherapy and Proton Tomography : Preliminary Results on Charged Particle Detection

M. M. Vignetti; Francis Calmon; Patrick Pittet; G. Pares; R. Cellier; Laurent Quiquerez; T. Chaves de Albuquerque; E. Bechetoille; E. Testa; J.-P. Lopez; D. Dauvergne; J. Hérault; A. Savoy-Navarro


Sensor Letters | 2015

Buried Quad Junction Photodetector Signal Processing for Multi-Label Fluorescence Detection

Thierry Courcier; Patrick Pittet; Laurent Quiquerez; Paul G. Charette; Vincent Aimez; Guo-Neng Lu

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Patrick Pittet

Institut des Nanotechnologies de Lyon

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Francis Calmon

Institut des Nanotechnologies de Lyon

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M. M. Vignetti

Institut des Nanotechnologies de Lyon

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R. Cellier

Institut des Nanotechnologies de Lyon

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Guo-Neng Lu

Claude Bernard University Lyon 1

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Gérard Bohner

Blaise Pascal University

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